Low-power-consumption ultraviolet photodetector based on p-NiO/SiO2/n-ZnO
•Ultraviolet photodetector based on thinfilm based p-NiO/SiO2/n-ZnO heterostructure is successfully fabricated for the first time.•A design of low-power-consumption photodetector is realized by using low-cost method.•Rectification ratio and rise time of the photodetector are 57 and 0.048 s, respecti...
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| Published in | Optics and laser technology Vol. 157; p. 108634 |
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| Main Authors | , , , , , , |
| Format | Journal Article |
| Language | English |
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Elsevier Ltd
01.01.2023
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| Abstract | •Ultraviolet photodetector based on thinfilm based p-NiO/SiO2/n-ZnO heterostructure is successfully fabricated for the first time.•A design of low-power-consumption photodetector is realized by using low-cost method.•Rectification ratio and rise time of the photodetector are 57 and 0.048 s, respectively.•Low dark current and good stability of the photodetector have been demonstrated.
Ultraviolet (UV) photodetector has found extensive applications, ranging from optical communication to ozone sensing. Wide bandgap metal oxide heterostructures have gained significant interest in the development of UV photodetectors due to their excellent electronic and optical properties, as well as ease of fabrication. However, there are surface and interface issues at these heterostructures that have detrimental effects on device performance. In this work, UV photodetector consisting of p-NiO/SiO2/n-ZnO heterostructure was prepared by RF magnetron sputtering method. The device exhibited remarkable performances, such as having a rectification ratio of 57, responsivity (R) of 5.77 AW−1, external quantum efficiency (EQE) of 1.96 × 103% and rise time of 0.048 s at a low power consumption of −0.1 V under 365 nm UV irradiation. This work demonstrated a method for low-cost fabrication of photodetectors with rectification behavior and at low power consumption. |
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| AbstractList | •Ultraviolet photodetector based on thinfilm based p-NiO/SiO2/n-ZnO heterostructure is successfully fabricated for the first time.•A design of low-power-consumption photodetector is realized by using low-cost method.•Rectification ratio and rise time of the photodetector are 57 and 0.048 s, respectively.•Low dark current and good stability of the photodetector have been demonstrated.
Ultraviolet (UV) photodetector has found extensive applications, ranging from optical communication to ozone sensing. Wide bandgap metal oxide heterostructures have gained significant interest in the development of UV photodetectors due to their excellent electronic and optical properties, as well as ease of fabrication. However, there are surface and interface issues at these heterostructures that have detrimental effects on device performance. In this work, UV photodetector consisting of p-NiO/SiO2/n-ZnO heterostructure was prepared by RF magnetron sputtering method. The device exhibited remarkable performances, such as having a rectification ratio of 57, responsivity (R) of 5.77 AW−1, external quantum efficiency (EQE) of 1.96 × 103% and rise time of 0.048 s at a low power consumption of −0.1 V under 365 nm UV irradiation. This work demonstrated a method for low-cost fabrication of photodetectors with rectification behavior and at low power consumption. |
| ArticleNumber | 108634 |
| Author | Lau, Shu Ping Jia, Menghan Lü, Yanfei Teng, Kar Seng Xiang, Jinzhong Wang, Fang Tang, Libin |
| Author_xml | – sequence: 1 givenname: Menghan surname: Jia fullname: Jia, Menghan organization: School of Physics and Astronomy, Yunnan University, Kunming 650500, People’s Republic of China – sequence: 2 givenname: Fang surname: Wang fullname: Wang, Fang organization: Yunnan State Key Laboratory of Advanced Photoelectric Materials and Devices, Kunming 650223, People’s Republic of China – sequence: 3 givenname: Libin surname: Tang fullname: Tang, Libin email: scitang@163.com organization: Kunming Institute of Physics, Kunming 650223, People’s Republic of China – sequence: 4 givenname: Jinzhong surname: Xiang fullname: Xiang, Jinzhong email: jzhxiang@ynu.edu.cn organization: School of Physics and Astronomy, Yunnan University, Kunming 650500, People’s Republic of China – sequence: 5 givenname: Kar Seng surname: Teng fullname: Teng, Kar Seng email: k.s.teng@swansea.ac.uk organization: Department of Electronic and Electrical Engineering, Swansea University, Bay Campus, Fabian Way, Swansea SA1 8EN, United Kingdom – sequence: 6 givenname: Shu Ping surname: Lau fullname: Lau, Shu Ping organization: Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong SAP, People’s Republic of China – sequence: 7 givenname: Yanfei surname: Lü fullname: Lü, Yanfei email: optik@sina.com organization: School of Physics and Astronomy, Yunnan University, Kunming 650500, People’s Republic of China |
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| Title | Low-power-consumption ultraviolet photodetector based on p-NiO/SiO2/n-ZnO |
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