Studies on hot filament chemical vapor deposition of diamond onto aluminum oxide

In situ two-step hot filament chemical vapor deposition (HFCVD) was developed to synthesize diamond films on aluminum oxide (Al 2O 3) substrates. The first step at higher temperature leads to precipitation of diamond-like carbon (DLC) and aluminum carbide (Al 4C 3) phases on the substrate surface, w...

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Published inMaterials science & engineering. B, Solid-state materials for advanced technology Vol. 39; no. 3; pp. L5 - L9
Main Authors Sumant, A.V., Godbole, V.P., Kshirsagar, S.T.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.07.1996
Elsevier
Subjects
Aluminum oxide
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science; rheology
Diamond
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Surface composition
Thin films
Thin films
Diamond
Surface composition
Aluminum oxide
Synthetic diamond
Diamonds
Aluminium carbides
XRD
Surface analysis
Experimental study
Diamond structure
Carbon
Characterization
CVD
SEM
Aluminium oxides
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Summary:In situ two-step hot filament chemical vapor deposition (HFCVD) was developed to synthesize diamond films on aluminum oxide (Al 2O 3) substrates. The first step at higher temperature leads to precipitation of diamond-like carbon (DLC) and aluminum carbide (Al 4C 3) phases on the substrate surface, which promote enhanced nucleation of diamond growth during the subsequent second step of deposition. The presence of carbide phase in the interface region is found to lead to oriented growth of diamond as well as enhanced adhesion properties.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0921-5107
1873-4944
DOI:10.1016/0921-5107(96)01579-6