The Study of Reactive Ion Etching of Heavily Doped Polysilicon Based on HBr/O2/He Plasmas for Thermopile Devices

• Published in: Materials Vol. 13; no. 19; p. 4278
• Main Authors: Zhou, Na, Li, Junjie, Mao, Haiyang, Liu, Hao, Liu, Jinbiao, Gao, Jianfeng, Xiang, Jinjuan, Hu, Yanpeng, Shi, Meng, Ju, Jiaxin, Lei, Yuxiao, Yang, Tao, Li, Junfeng, Wang, Wenwu
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 25.09.2020; MDPI
• Subjects: Anisotropy; Carbon; Chemical vapor deposition; etch; Gases; HBr/O2/He; heavily doped; Hydrogen bromide; Microelectromechanical systems; Plasma etching; Plasmas (physics); Polysilicon; Reactive ion etching; Selectivity; Silicon wafers; Spectrum analysis; Thermocouples; thermopile; Thermopiles; United States > US
• ISSN: 1996-1944; 1996-1944
• DOI: 10.3390/ma13194278

Heavily doped polysilicon layers have been widely used in the fabrication of microelectromechanical systems (MEMS). However, the investigation of high selectivity, anisotropy, and excellent uniformity of heavily doped polysilicon etching is limited. In this work, reactive ion etching of undoped and heavily doped polysilicon-based hydrogen bromide (HBr) plasmas have been compared. The mechanism of etching of heavily doped polysilicon is studied in detail. The final results demonstrate that the anisotropy profile of heavily doped polysilicon can be obtained based on a HBr plasma process. An excellent uniformity of resistance of the thermocouples reached ± 2.11%. This technology provides an effective way for thermopile and other MEMS devices fabrication.