Efficient perovskite solar cells by metal ion doping
Realizing the theoretical limiting power conversion efficiency (PCE) in perovskite solar cells requires a better understanding and control over the fundamental loss processes occurring in the bulk of the perovskite layer and at the internal semiconductor interfaces in devices. One of the main challe...
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| Published in | Energy & environmental science Vol. 9; no. 9; pp. 2892 - 2901 |
|---|---|
| Main Authors | , , , , , , , , , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
01.01.2016
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| Subjects | |
| Online Access | Get full text |
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| Abstract | Realizing the theoretical limiting power conversion efficiency (PCE) in perovskite solar cells requires a better understanding and control over the fundamental loss processes occurring in the bulk of the perovskite layer and at the internal semiconductor interfaces in devices. One of the main challenges is to eliminate the presence of charge recombination centres throughout the film which have been observed to be most densely located at regions near the grain boundaries. Here, we introduce aluminium acetylacetonate to the perovskite precursor solution, which improves the crystal quality by reducing the microstrain in the polycrystalline film. At the same time, we achieve a reduction in the non-radiative recombination rate, a remarkable improvement in the photoluminescence quantum efficiency (PLQE) and a reduction in the electronic disorder deduced from an Urbach energy of only 12.6 meV in complete devices. As a result, we demonstrate a PCE of 19.1% with negligible hysteresis in planar heterojunction solar cells comprising all organic p and n-type charge collection layers. Our work shows that an additional level of control of perovskite thin film quality is possible
via
impurity cation doping, and further demonstrates the continuing importance of improving the electronic quality of the perovskite absorber and the nature of the heterojunctions to further improve the solar cell performance. |
|---|---|
| AbstractList | Realizing the theoretical limiting power conversion efficiency (PCE) in perovskite solar cells requires a better understanding and control over the fundamental loss processes occurring in the bulk of the perovskite layer and at the internal semiconductor interfaces in devices. One of the main challenges is to eliminate the presence of charge recombination centres throughout the film which have been observed to be most densely located at regions near the grain boundaries. Here, we introduce aluminium acetylacetonate to the perovskite precursor solution, which improves the crystal quality by reducing the microstrain in the polycrystalline film. At the same time, we achieve a reduction in the non-radiative recombination rate, a remarkable improvement in the photoluminescence quantum efficiency (PLQE) and a reduction in the electronic disorder deduced from an Urbach energy of only 12.6 meV in complete devices. As a result, we demonstrate a PCE of 19.1% with negligible hysteresis in planar heterojunction solar cells comprising all organic p and n-type charge collection layers. Our work shows that an additional level of control of perovskite thin film quality is possible
via
impurity cation doping, and further demonstrates the continuing importance of improving the electronic quality of the perovskite absorber and the nature of the heterojunctions to further improve the solar cell performance. Realizing the theoretical limiting power conversion efficiency (PCE) in perovskite solar cells requires a better understanding and control over the fundamental loss processes occurring in the bulk of the perovskite layer and at the internal semiconductor interfaces in devices. One of the main challenges is to eliminate the presence of charge recombination centres throughout the film which have been observed to be most densely located at regions near the grain boundaries. Here, we introduce aluminium acetylacetonate to the perovskite precursor solution, which improves the crystal quality by reducing the microstrain in the polycrystalline film. At the same time, we achieve a reduction in the non-radiative recombination rate, a remarkable improvement in the photoluminescence quantum efficiency (PLQE) and a reduction in the electronic disorder deduced from an Urbach energy of only 12.6 meV in complete devices. As a result, we demonstrate a PCE of 19.1% with negligible hysteresis in planar heterojunction solar cells comprising all organic p and n-type charge collection layers. Our work shows that an additional level of control of perovskite thin film quality is possible via impurity cation doping, and further demonstrates the continuing importance of improving the electronic quality of the perovskite absorber and the nature of the heterojunctions to further improve the solar cell performance. |
| Author | Ramirez, Ivan Huang, Jian Wang, Zhiping Patel, Jay B. Nicholas, Robin J. Pathak, Sandeep Zhang, Wei Wisnivesky-Rocca-Rivarola, Florencia deQuilettes, Dane W. Mohd Yusof, Hanis A. Zhang, Jin Nayak, Pabitra K. Ginger, David S. Wang, Jacob Tse-Wei Vaynzof, Yana Johnston, Michael B. Grovenor, Chris Snaith, Henry J. Ducati, Caterina Zhu, Rui |
| Author_xml | – sequence: 1 givenname: Jacob Tse-Wei surname: Wang fullname: Wang, Jacob Tse-Wei organization: Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, UK – sequence: 2 givenname: Zhiping surname: Wang fullname: Wang, Zhiping organization: Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, UK – sequence: 3 givenname: Sandeep surname: Pathak fullname: Pathak, Sandeep organization: Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, UK – sequence: 4 givenname: Wei surname: Zhang fullname: Zhang, Wei organization: Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, UK – sequence: 5 givenname: Dane W. surname: deQuilettes fullname: deQuilettes, Dane W. organization: Department of Chemistry, University of Washington, Seattle, USA – sequence: 6 givenname: Florencia surname: Wisnivesky-Rocca-Rivarola fullname: Wisnivesky-Rocca-Rivarola, Florencia organization: Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK – sequence: 7 givenname: Jian surname: Huang fullname: Huang, Jian organization: Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, UK – sequence: 8 givenname: Pabitra K. surname: Nayak fullname: Nayak, Pabitra K. organization: Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, UK – sequence: 9 givenname: Jay B. surname: Patel fullname: Patel, Jay B. organization: Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, UK – sequence: 10 givenname: Hanis A. surname: Mohd Yusof fullname: Mohd Yusof, Hanis A. organization: Department of Materials, University of Oxford, Oxford, UK – sequence: 11 givenname: Yana surname: Vaynzof fullname: Vaynzof, Yana organization: Kirchhoff Institute for Physics (KIP), 69120 Heidelberg, Germany, Centre for Advanced Materials (CAM), 69120 Heidelberg – sequence: 12 givenname: Rui orcidid: 0000-0001-7631-3589 surname: Zhu fullname: Zhu, Rui organization: State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China – sequence: 13 givenname: Ivan surname: Ramirez fullname: Ramirez, Ivan organization: Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, UK – sequence: 14 givenname: Jin surname: Zhang fullname: Zhang, Jin organization: Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, UK – sequence: 15 givenname: Caterina surname: Ducati fullname: Ducati, Caterina organization: Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK – sequence: 16 givenname: Chris surname: Grovenor fullname: Grovenor, Chris organization: Department of Materials, University of Oxford, Oxford, UK – sequence: 17 givenname: Michael B. surname: Johnston fullname: Johnston, Michael B. organization: Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, UK – sequence: 18 givenname: David S. surname: Ginger fullname: Ginger, David S. organization: Department of Chemistry, University of Washington, Seattle, USA – sequence: 19 givenname: Robin J. surname: Nicholas fullname: Nicholas, Robin J. organization: Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, UK – sequence: 20 givenname: Henry J. surname: Snaith fullname: Snaith, Henry J. organization: Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, UK |
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