Development of non-Fourier thermal attitude for three-dimensional and graphene-based MOS devices

• Published in: Applied thermal engineering Vol. 104; pp. 616 - 627
• Main Authors: Shomali, Zahra, Abbassi, Abbas, Ghazanfarian, Jafar
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 05.07.2016
• Subjects: Cooling; FinFET; Graphene; Mathematical models; MOSFET; MOSFETs; Nanoscale heat transfer; Non-Fourier; Semiconductor devices; Silicon; Thermal engineering; Three dimensional; Transistors; Tri-Gate; Nanoscale heat transfer; MOSFET; Tri-Gate; Non-Fourier; FinFET; Three dimensional

•Three-dimensional DPL modelling of the 3-D MOSFETs is developed.•Common 3-D silicon MOSFET, FinFET, and Tri-GATE transistor are dealt.•The Tri-Gate with the graphene heat spreader is also studied.•Temperature dependent thermal characteristics of silicon are also considered.•This 3-D model makes it...