APA (7th ed.) Citation

Vigneshwara Raja, P., Nallatamby, J., DasGupta, N., & DasGupta, A. (2021). Trapping effects on AlGaN/GaN HEMT characteristics. Solid-state electronics, 176, 107929. https://doi.org/10.1016/j.sse.2020.107929

Chicago Style (17th ed.) Citation

Vigneshwara Raja, P., Jean-Christophe Nallatamby, Nandita DasGupta, and Amitava DasGupta. "Trapping Effects on AlGaN/GaN HEMT Characteristics." Solid-state Electronics 176 (2021): 107929. https://doi.org/10.1016/j.sse.2020.107929.

MLA (9th ed.) Citation

Vigneshwara Raja, P., et al. "Trapping Effects on AlGaN/GaN HEMT Characteristics." Solid-state Electronics, vol. 176, 2021, p. 107929, https://doi.org/10.1016/j.sse.2020.107929.