Dark current suppression of amorphous selenium based photosensors by the ZnO hole blocking layer

• Published in: Current applied physics Vol. 14; no. 5; pp. 659 - 664
• Main Authors: Yu, Tung-Yuan, Pan, Fu-Ming, Chang, Cheng-Yi, Hu, Tien, Chen, Jenn-Fang, Wang, Jia-Feng, Lin, Cheng-Lu, Chen, Tsung-Han, Chen, Te-Ming
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.05.2014; 한국물리학회
• Subjects: Amorphous Se; Dark current; Density; Deposition; DLTS; Flow rate; Hole blocking layer; Oxygen vacancy; Selenium; Thin films; Vacancies; Zinc oxide; 물리학; Hole blocking layer; Zinc oxide; Amorphous Se; DLTS; Oxygen vacancy

To study the influence of defects in the hole blocking layer (HBL) on the dark current of amorphous selenium (a-Se) based photosensors, we prepared ZnO thin films by reactive sputter deposition (RSD) for the use as the HBL of the photosensors. The ZnO HBL layers prepared with different oxygen flow r...