Dark current suppression of amorphous selenium based photosensors by the ZnO hole blocking layer
To study the influence of defects in the hole blocking layer (HBL) on the dark current of amorphous selenium (a-Se) based photosensors, we prepared ZnO thin films by reactive sputter deposition (RSD) for the use as the HBL of the photosensors. The ZnO HBL layers prepared with different oxygen flow r...
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| Published in | Current applied physics Vol. 14; no. 5; pp. 659 - 664 |
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| Main Authors | , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier B.V
01.05.2014
한국물리학회 |
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| Abstract | To study the influence of defects in the hole blocking layer (HBL) on the dark current of amorphous selenium (a-Se) based photosensors, we prepared ZnO thin films by reactive sputter deposition (RSD) for the use as the HBL of the photosensors. The ZnO HBL layers prepared with different oxygen flow rates were characterized by X-ray photoelectron spectroscopy, Raman scattering analysis and photoluminescence, indicating that the density of oxygen vacancies in the ZnO thin films is significantly affected by the oxygen flow rate. The deep level transient spectroscopy measurement reveals two hole trap levels present in the RSD deposited ZnO thin films; one is at 0.94 eV and the other at 0.24 eV above the valence band edge. The electrical performance of the a-Se photosensor is largely influenced by the amount of oxygen vacancies in the ZnO thin film. The a-Se photosensor with the ZnO HBL of the most oxygen vacancies has the lowest dark current and demonstrates the highest breakdown field.
•ZnO film was prepared for the use as the hole blocking layer in a-Se photosensors.•Material and electrical analyses related oxygen vacancies with hole traps in ZnO.•Dark current of a-Se photosensors depends on the oxygen vacancy density in ZnO. |
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| AbstractList | To study the influence of defects in the hole blocking layer (HBL) on the dark current of amorphous selenium (a-Se) based photosensors, we prepared ZnO thin films by reactive sputter deposition (RSD) for the use as the HBL of the photosensors. The ZnO HBL layers prepared with different oxygen flow rates were characterized by X-ray photoelectron spectroscopy, Raman scattering analysis and photoluminescence, indicating that the density of oxygen vacancies in the ZnO thin films is significantly affected by the oxygen flow rate. The deep level transient spectroscopy measurement reveals two hole trap levels present in the RSD deposited ZnO thin films; one is at 0.94 eV and the other at 0.24 eV above the valence band edge. The electrical performance of the a-Se photosensor is largely influenced by the amount of oxygen vacancies in the ZnO thin film. The a-Se photosensor with the ZnO HBL of the most oxygen vacancies has the lowest dark current and demonstrates the highest breakdown field.
•ZnO film was prepared for the use as the hole blocking layer in a-Se photosensors.•Material and electrical analyses related oxygen vacancies with hole traps in ZnO.•Dark current of a-Se photosensors depends on the oxygen vacancy density in ZnO. To study the influence of defects in the hole blocking layer (HBL) on the dark current of amorphous selenium (a-Se) based photosensors, we prepared ZnO thin films by reactive sputter deposition (RSD) for the use as the HBL of the photosensors. The ZnO HBL layers prepared with different oxygen flow rates were characterized by X-ray photoelectron spectroscopy, Raman scattering analysis and photoluminescence, indicating that the density of oxygen vacancies in the ZnO thin films is significantly affected by the oxygen flow rate. The deep level transient spectroscopy measurement reveals two hole trap levels present in the RSD deposited ZnO thin films; one is at 0.94 eV and the other at 0.24 eV above the valence band edge. The electrical performance of the a-Se photosensor is largely influenced by the amount of oxygen vacancies in the ZnO thin film. The a-Se photosensor with the ZnO HBL of the most oxygen vacancies has the lowest dark current and demonstrates the highest breakdown field. KCI Citation Count: 7 To study the influence of defects in the hole blocking layer (HBL) on the dark current of amorphous selenium (a-Se) based photosensors, we prepared ZnO thin films by reactive sputter deposition (RSD) for the use as the HBL of the photosensors. The ZnO HBL layers prepared with different oxygen flow rates were characterized by X-ray photoelectron spectroscopy, Raman scattering analysis and photoluminescence, indicating that the density of oxygen vacancies in the ZnO thin films is significantly affected by the oxygen flow rate. The deep level transient spectroscopy measurement reveals two hole trap levels present in the RSD deposited ZnO thin films; one is at 0.94 eV and the other at 0.24 eV above the valence band edge. The electrical performance of the a-Se photosensor is largely influenced by the amount of oxygen vacancies in the ZnO thin film. The a-Se photosensor with the ZnO HBL of the most oxygen vacancies has the lowest dark current and demonstrates the highest breakdown field. |
| Author | Lin, Cheng-Lu Yu, Tung-Yuan Chen, Tsung-Han Hu, Tien Chen, Jenn-Fang Chen, Te-Ming Wang, Jia-Feng Chang, Cheng-Yi Pan, Fu-Ming |
| Author_xml | – sequence: 1 givenname: Tung-Yuan surname: Yu fullname: Yu, Tung-Yuan organization: Department of Materials Science and Engineering, National Chiao-Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan, ROC – sequence: 2 givenname: Fu-Ming surname: Pan fullname: Pan, Fu-Ming email: fmpan@faculty.nctu.edu.tw organization: Department of Materials Science and Engineering, National Chiao-Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan, ROC – sequence: 3 givenname: Cheng-Yi surname: Chang fullname: Chang, Cheng-Yi organization: Department of Materials Science and Engineering, National Chiao-Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan, ROC – sequence: 4 givenname: Tien surname: Hu fullname: Hu, Tien organization: Department of Materials Science and Engineering, National Chiao-Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan, ROC – sequence: 5 givenname: Jenn-Fang surname: Chen fullname: Chen, Jenn-Fang organization: Department of Electrophysics, National Chiao-Tung University, Hsinchu 30010, Taiwan, ROC – sequence: 6 givenname: Jia-Feng surname: Wang fullname: Wang, Jia-Feng organization: Department of Electrophysics, National Chiao-Tung University, Hsinchu 30010, Taiwan, ROC – sequence: 7 givenname: Cheng-Lu surname: Lin fullname: Lin, Cheng-Lu organization: Department of Electrophysics, National Chiao-Tung University, Hsinchu 30010, Taiwan, ROC – sequence: 8 givenname: Tsung-Han surname: Chen fullname: Chen, Tsung-Han organization: AU Optronics Corporation, Hsinchu Science Park, Hsinchu 30078, Taiwan, ROC – sequence: 9 givenname: Te-Ming surname: Chen fullname: Chen, Te-Ming organization: AU Optronics Corporation, Hsinchu Science Park, Hsinchu 30078, Taiwan, ROC |
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| Keywords | Hole blocking layer Zinc oxide Amorphous Se DLTS Oxygen vacancy |
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| Snippet | To study the influence of defects in the hole blocking layer (HBL) on the dark current of amorphous selenium (a-Se) based photosensors, we prepared ZnO thin... |
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| SubjectTerms | Amorphous Se Dark current Density Deposition DLTS Flow rate Hole blocking layer Oxygen vacancy Selenium Thin films Vacancies Zinc oxide 물리학 |
| Title | Dark current suppression of amorphous selenium based photosensors by the ZnO hole blocking layer |
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