Highly sensitive and selective room-temperature NO2 gas-sensing characteristics of SnOX-based p-type thin-film transistor

• Published in: Sensors and actuators. B, Chemical Vol. 288; pp. 625 - 633
• Main Authors: Jeong, Hwan-Seok, Park, Min-Jae, Kwon, Soo-Hun, Joo, Hyo-Jun, Kwon, Hyuck-In
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01.06.2019; Elsevier Science Ltd
• Subjects: Ammonia; Chemical bonds; Detection; Field effect transistors; Field emission microscopy; Gas sensors; Gases; Hydrogen sulfide; Metal oxides; Morphology; Nitrogen dioxide; NO2 gas sensing; Organic chemistry; P-type metal oxide semiconductor; P-type semiconductors; Photoelectrons; Room temperature; Scanning electron microscopy; Selectivity; Semiconductor devices; Sensitivity; Sensors; SnO; SnOX; Thin film transistors; Thin-film transistor; Tin; Tin oxides; Transistors; X-ray diffraction; NO2 gas sensing; SnOX; SnO; Thin-film transistor; P-type metal oxide semiconductor

•A p-type metal oxide semiconductor-based TFT-type gas sensor was studied for the first time by using SnOX for both the channel and sensing layers.•The fabricated SnOX TFT gas sensor showed a maximum response value of 19.4–10 ppm NO2 at room temperature (RT).•This maximum response value is significa...