Passivated graphene transistors fabricated on a millimeter-sized single-crystal graphene film prepared with chemical vapor deposition

• Published in: Journal of physics. D, Applied physics Vol. 48; no. 29; pp. 295106 - 7
• Main Authors: Lin, Meng-Yu, Wang, Cheng-Hung, Chang, Shu-Wei, Lee, Si-Chen, Lin, Shih-Yen
• Format: Journal Article
• Language: English
• Published: IOP Publishing 29.07.2015
• Subjects: Channels; Chemical vapor deposition; Density; Graphene; Partial pressure; passivation; Semiconductor devices; Single crystals; Transistors

In this work, we first investigate the effects of partial pressures and flow rates of precursors on the single-crystal graphene growth using chemical vapor depositions on copper foils. These factors are shown to be critical to the growth rate, seeding density and size of graphene single crystals. Th...