Passivated graphene transistors fabricated on a millimeter-sized single-crystal graphene film prepared with chemical vapor deposition

In this work, we first investigate the effects of partial pressures and flow rates of precursors on the single-crystal graphene growth using chemical vapor depositions on copper foils. These factors are shown to be critical to the growth rate, seeding density and size of graphene single crystals. Th...

Full description

Saved in:
Bibliographic Details
Published inJournal of physics. D, Applied physics Vol. 48; no. 29; pp. 295106 - 7
Main Authors Lin, Meng-Yu, Wang, Cheng-Hung, Chang, Shu-Wei, Lee, Si-Chen, Lin, Shih-Yen
Format Journal Article
LanguageEnglish
Published IOP Publishing 29.07.2015
Subjects
Channels
Chemical vapor deposition
Density
Graphene
Partial pressure
passivation
Semiconductor devices
Single crystals
Transistors
Online AccessGet full text

Cover

More Information
Summary:In this work, we first investigate the effects of partial pressures and flow rates of precursors on the single-crystal graphene growth using chemical vapor depositions on copper foils. These factors are shown to be critical to the growth rate, seeding density and size of graphene single crystals. The prepared graphene films in millimeter sizes are then bubbling transferred to silicon-dioxide/silicon substrates for high-mobility graphene transistor fabrications. After high-temperature annealing and hexamethyldisilazane passivation, the water attachment is removed from the graphene channel. The elimination of uncontrolled doping and enhancement of carrier mobility accompanied by these procedures indicate that they are promising for fabrications of graphene transistors.
Bibliography:JPhysD-105030.R1
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/48/29/295106