Nanoscale groove textured β-Ga2O3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity

• Published in: Applied physics letters Vol. 113; no. 22
• Main Authors: Kim, Munho, Huang, Hsien-Chih, Kim, Jeong Dong, Chabak, Kelson D., Kalapala, Akhil Raj Kumar, Zhou, Weidong, Li, Xiuling
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 26.11.2018
• Subjects: Applied physics; Chemical etching; Dark current; Gallium oxides; Optoelectronics; Organic chemistry; Photodiodes; Room temperature; Stoichiometry; Texturing; Ultraviolet detectors

β-Ga2O3 is an emerging wide band-gap semiconductor that holds great promise for next generation power electronics and optoelectronics. β-Ga2O3 based ultraviolet photodetectors have been the subject of active research for the last few years. However, no micro and nanostructure surface texturing has b...