Forming-free, bipolar resistivity switching characteristics of fully transparent resistive random access memory with IZO/α-IGZO/ITO structure

• Published in: Journal of physics. D, Applied physics Vol. 49; no. 38; pp. 385102 - 385108
• Main Authors: Lo, Chun-Chieh, Hsieh, Tsung-Eong
• Format: Journal Article
• Language: English
• Published: IOP Publishing 28.09.2016
• Subjects: Devices; forming-free; Gallium; IGZO; Indium; Indium tin oxide; Random access memory; resistance switching; Switching; transparent resistive random access memory (TRRAM); Trapping; Zinc oxide

Fully transparent resistive random access memory (TRRAM) containing amorphous indium gallium zinc oxide as the resistance switching (RS) layer and transparent conducting oxides (indium zinc oxide and indium tin oxide) as the electrodes was prepared. Optical measurement indicated the transmittance of...