Forming-free, bipolar resistivity switching characteristics of fully transparent resistive random access memory with IZO/α-IGZO/ITO structure - Lo, Chun-Chieh; Hsieh, Tsung-Eong (Journal of physics. D, Applied physics, 2016)
Keywords: Devices; forming-free; Gallium; IGZO; Indium; Indium tin oxide; Random access memory; resistance switching; Switching; transparent resistive random access memory (TRRAM); Trapping; Zinc oxide