Bifacial passivation of n -silicon metal–insulator–semiconductor photoelectrodes for efficient oxygen and hydrogen evolution reactions

• Published in: Energy & environmental science Vol. 13; no. 1; pp. 221 - 228
• Main Authors: Liu, Bin, Feng, Shijia, Yang, Lifei, Li, Chengcheng, Luo, Zhibin, Wang, Tuo, Gong, Jinlong
• Format: Journal Article
• Language: English
• Published: Cambridge Royal Society of Chemistry 01.01.2020
• Subjects: Absorption; Amorphous silicon; Carrier lifetime; Charge transport; Current carriers; Electromagnetic absorption; Evolution; Hydrogen; Hydrogen evolution reactions; Metal oxides; Metal surfaces; Metals; Minority carriers; MIS (semiconductors); Oxygen; Oxygen evolution reactions; Passivity; Photocathodes; Photoelectric effect; Photoelectric emission; Photovoltaic cells; Silicon; Silicon substrates; Surface chemistry; Titanium dioxide; Water splitting

Silicon-based (Si-based) junctions have been widely investigated in recent years as photoelectrochemical (PEC) water splitting photoelectrodes, including buried junctions and metal–insulator–semiconductor (MIS) Schottky junctions. However, Si-based MIS photoelectrodes suffer from low performance for...