Multipacting mitigation by atomic layer deposition: The case study of titanium nitride

This study investigates the use of atomic layer deposition (ALD) to mitigate multipacting phenomena inside superconducting radio frequency cavities used in particle accelerators while preserving high quality factors in the 1010 range. The unique ALD capability to control the film thickness down to t...

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Published inJournal of applied physics Vol. 136; no. 8
Main Authors Kalboussi, Y., Dadouch, S., Delatte, B., Miserque, F., Dragoe, D., Eozenou, F., Baudrier, M., Tusseau-Nenez, S., Zheng, Y., Maurice, L., Cenni, E., Bertrand, Q., Sahuquet, P., Fayette, E., Jullien, G., Inguimbert, C., Belhaj, M., Proslier, T.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 28.08.2024
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Abstract This study investigates the use of atomic layer deposition (ALD) to mitigate multipacting phenomena inside superconducting radio frequency cavities used in particle accelerators while preserving high quality factors in the 1010 range. The unique ALD capability to control the film thickness down to the atomic level on arbitrary complex shape objects enables the fine-tuning of TiN film resistivity and total electron emission yield (TEEY) from coupons to devices. This level of control allows us to adequately choose a TiN film thickness that provides both high resistivity to prevent Ohmic losses and a low TEEY to mitigate multipacting for the application of interest. The methodology presented in this work can be scaled to other domains and devices subject to RF fields in vacuum and sensitive to multipacting or electron discharge processes with their own requirements in resistivities and TEEY values.
AbstractList This study investigates the use of atomic layer deposition (ALD) to mitigate multipacting phenomena inside superconducting radio frequency cavities used in particle accelerators while preserving high quality factors in the 1010 range. The unique ALD capability to control the film thickness down to the atomic level on arbitrary complex shape objects enables the fine-tuning of TiN film resistivity and total electron emission yield (TEEY) from coupons to devices. This level of control allows us to adequately choose a TiN film thickness that provides both high resistivity to prevent Ohmic losses and a low TEEY to mitigate multipacting for the application of interest. The methodology presented in this work can be scaled to other domains and devices subject to RF fields in vacuum and sensitive to multipacting or electron discharge processes with their own requirements in resistivities and TEEY values.
Author Kalboussi, Y.
Dadouch, S.
Tusseau-Nenez, S.
Zheng, Y.
Sahuquet, P.
Proslier, T.
Baudrier, M.
Inguimbert, C.
Fayette, E.
Bertrand, Q.
Miserque, F.
Dragoe, D.
Jullien, G.
Eozenou, F.
Cenni, E.
Belhaj, M.
Maurice, L.
Delatte, B.
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  surname: Bertrand
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  surname: Sahuquet
  fullname: Sahuquet, P.
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  surname: Jullien
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  organization: Département des Accélérateurs, de la Cryogénie et du Magnétisme, Université Paris-Saclay, CEA
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Issue 8
Keywords Particle accelerators
Electron yield
Atomic layer deposition
Crystallographic defects
Total electron emission yield TEEY
Superconductivity
Language English
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Snippet This study investigates the use of atomic layer deposition (ALD) to mitigate multipacting phenomena inside superconducting radio frequency cavities used in...
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SubjectTerms Atomic layer epitaxy
Complex shape objects
Electrical resistivity
Electron emission
Engineering Sciences
Film thickness
Particle accelerators
Physics
Titanium nitride
Title Multipacting mitigation by atomic layer deposition: The case study of titanium nitride
URI http://dx.doi.org/10.1063/5.0221943
https://www.proquest.com/docview/3098361122
https://hal.science/hal-04879943
Volume 136
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