Microscopic origin of the fast crystallization ability of Ge-Sb-Te phase-change memory materials
Ge–Sb–Te materials are used in optical DVDs and non-volatile electronic memories (phase-change random-access memory). In both, data storage is effected by fast, reversible phase changes between crystalline and amorphous states. Despite much experimental and theoretical effort to understand the phase...
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Published in | Nature materials Vol. 7; no. 5; pp. 399 - 405 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
London
Nature Publishing Group UK
01.05.2008
Nature Publishing Group |
Subjects | |
Online Access | Get full text |
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