Microscopic origin of the fast crystallization ability of Ge-Sb-Te phase-change memory materials

• Published in: Nature materials Vol. 7; no. 5; pp. 399 - 405
• Main Authors: Elliott, S. R, Hegedüs, J
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 01.05.2008; Nature Publishing Group
• Subjects: Biomaterials; Chemistry and Materials Science; Condensed Matter Physics; Crystallization; Data storage; Information storage; Materials Science; Molecular structure; Nanotechnology; Nucleation; Optical and Electronic Materials; Phase transitions; Simulation

Ge–Sb–Te materials are used in optical DVDs and non-volatile electronic memories (phase-change random-access memory). In both, data storage is effected by fast, reversible phase changes between crystalline and amorphous states. Despite much experimental and theoretical effort to understand the phase...