Measuring thermoelectric property of nano-heterostructure

A method of measuring the thermoelectric power of nano-heterostructures based on four-probe scanning tunneling microscopy is presented. The process is composed of the in-situ fabrication of a tungsten-indium tip, the precise control of the tip-sample contact and the identification of thermoelectric...

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Published inChinese physics B Vol. 20; no. 10; pp. 379 - 383
Main Authors Lu, Hong-Liang (红亮 路), Zhang, Chen-Dong (晨栋 张), Cai, Jin-Ming (金明 蔡), Gao, Min (敏高), Zou, Qiang (强邹), Guo, Hai-Ming (海明 郭), Gao, Hong-Jun (鸿钧 高)
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.10.2011
Subjects
原位制备
塞贝克系数
异质结构
扫描隧道显微镜
测量方法
热电势
纳米
财产
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Abstract A method of measuring the thermoelectric power of nano-heterostructures based on four-probe scanning tunneling microscopy is presented. The process is composed of the in-situ fabrication of a tungsten-indium tip, the precise control of the tip-sample contact and the identification of thermoelectric potential. When the temperature of the substrate is elevated, while that of the tip is kept at room temperature, a thermoelectric potential occurs and can be detected by a current voltage measurement. As an example of its application, the method is demonstrated to be effective to measure the thermoelectric power in several systems. A Seebeck coefficient of tens of IxV/K is obtained in graphene epitaxially grown on Ru （0001） substrate and the thermoelectric potential polarity of this system is found to be the reverse of that of bare Ru （0001） substrate.
AbstractList A method of measuring the thermoelectric power of nano-heterostructures based on four-probe scanning tunneling microscopy is presented. The process is composed of the in-situ fabrication of a tungsten-indium tip, the precise control of the tip-sample contact and the identification of thermoelectric potential. When the temperature of the substrate is elevated, while that of the tip is kept at room temperature, a thermoelectric potential occurs and can be detected by a current voltage measurement. As an example of its application, the method is demonstrated to be effective to measure the thermoelectric power in several systems. A Seebeck coefficient of tens of IxV/K is obtained in graphene epitaxially grown on Ru （0001） substrate and the thermoelectric potential polarity of this system is found to be the reverse of that of bare Ru （0001） substrate.
Author Lu Hong-Liang Zhang Chen-Dong Cai Jin-Ming Gao Min Zou Qiang Guo Hai-Ming Gao Hong-Jun
AuthorAffiliation Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
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Notes A method of measuring the thermoelectric power of nano-heterostructures based on four-probe scanning tunneling microscopy is presented. The process is composed of the in-situ fabrication of a tungsten-indium tip, the precise control of the tip-sample contact and the identification of thermoelectric potential. When the temperature of the substrate is elevated, while that of the tip is kept at room temperature, a thermoelectric potential occurs and can be detected by a current voltage measurement. As an example of its application, the method is demonstrated to be effective to measure the thermoelectric power in several systems. A Seebeck coefficient of tens of IxV/K is obtained in graphene epitaxially grown on Ru （0001） substrate and the thermoelectric potential polarity of this system is found to be the reverse of that of bare Ru （0001） substrate.
11-5639/O4
thermoelectric property, four-probe scanning tunneling microscope, graphene, nano-heterostructure
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Snippet A method of measuring the thermoelectric power of nano-heterostructures based on four-probe scanning tunneling microscopy is presented. The process is composed...
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SubjectTerms 原位制备
塞贝克系数
异质结构
扫描隧道显微镜
测量方法
热电势
纳米
财产
Title Measuring thermoelectric property of nano-heterostructure
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