Modeling and Exploration of the Voltage-Controlled Magnetic Anisotropy Effect for the Next-Generation Low-Power and High-Speed MRAM Applications - Kang, Wang; Ran, Yi; Zhang, Youguang; Lv, Weifeng; Zhao, Weisheng (IEEE transactions on nanotechnology, 2017)
Keywords: Electric potential; Energy barrier; Energy consumption; High speed; Magnetic anisotropy; Magnetic tunnel junction (MTJ); Magnetic tunneling; Magnetization; Magnetoresistivity; Mathematical model; nonvolatile memory; Power management; Random access memory; spin transfer torque (STT); Switches; Thermal stability; Tunnel junctions; Tunnel magnetoresistance; Voltage; voltage-controlled magnetic anisotropy (VCMA)