APA (7th ed.) Citation

Kang, W., Ran, Y., Zhang, Y., Lv, W., & Zhao, W. (2017). Modeling and Exploration of the Voltage-Controlled Magnetic Anisotropy Effect for the Next-Generation Low-Power and High-Speed MRAM Applications. IEEE transactions on nanotechnology, 16(3), 387-395. https://doi.org/10.1109/TNANO.2017.2660530

Chicago Style (17th ed.) Citation

Kang, Wang, Yi Ran, Youguang Zhang, Weifeng Lv, and Weisheng Zhao. "Modeling and Exploration of the Voltage-Controlled Magnetic Anisotropy Effect for the Next-Generation Low-Power and High-Speed MRAM Applications." IEEE Transactions on Nanotechnology 16, no. 3 (2017): 387-395. https://doi.org/10.1109/TNANO.2017.2660530.

MLA (9th ed.) Citation

Kang, Wang, et al. "Modeling and Exploration of the Voltage-Controlled Magnetic Anisotropy Effect for the Next-Generation Low-Power and High-Speed MRAM Applications." IEEE Transactions on Nanotechnology, vol. 16, no. 3, 2017, pp. 387-395, https://doi.org/10.1109/TNANO.2017.2660530.