Machine vision inspection of early failure and line-shaped defects of blue InGaN/GaN light emitting diodes soaked in liquid nitrogen for cryogenic tests
•Cryogenic tests reveal spectral shifts in LEDs.•Line-shaped defects appear on GaN LED surface.•Machine vision detects early areas of degradation.•Reliability studies show promise for Space and Arctic applications. Cryogenic tests were conducted on blue InGaN/GaN light-emitting diodes (LEDs) by imme...
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Published in | Results in physics Vol. 50; p. 106594 |
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Main Authors | , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
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Elsevier B.V
01.07.2023
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Abstract | •Cryogenic tests reveal spectral shifts in LEDs.•Line-shaped defects appear on GaN LED surface.•Machine vision detects early areas of degradation.•Reliability studies show promise for Space and Arctic applications.
Cryogenic tests were conducted on blue InGaN/GaN light-emitting diodes (LEDs) by immersing the device in liquid nitrogen (LN2). To study the degradation of the LEDs, a combination of optical, electrical, and material characterizations were performed on the LN2-soaked device. The results indicate that noticeable emission spectral shifts were observed during the LED immersion due to lattice deformation. Moreover, clustering of cracks was generated in the cross-section, and line-shaped defects appeared on the surface of the GaN LED, which was different from the defects on AlInGaP LEDs after LN2 immersion. To track the trend of device damage, computer-assisted OpenCV-Python software was used to zoom in on nuanced variations in certain areas of the emission images. Early degradation of certain areas can be detected by computer-assisted machine vision, which has the potential to provide an early warning and protective circuits for the system consisting of the initial degraded LEDs. Reliability studies on LN2-soaked InGaN/GaN LEDs show promise in studying the reliability issues of GaN device applications in Arctic regions and space exploration. |
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AbstractList | Cryogenic tests were conducted on blue InGaN/GaN light-emitting diodes (LEDs) by immersing the device in liquid nitrogen (LN2). To study the degradation of the LEDs, a combination of optical, electrical, and material characterizations were performed on the LN2-soaked device. The results indicate that noticeable emission spectral shifts were observed during the LED immersion due to lattice deformation. Moreover, clustering of cracks was generated in the cross-section, and line-shaped defects appeared on the surface of the GaN LED, which was different from the defects on AlInGaP LEDs after LN2 immersion. To track the trend of device damage, computer-assisted OpenCV-Python software was used to zoom in on nuanced variations in certain areas of the emission images. Early degradation of certain areas can be detected by computer-assisted machine vision, which has the potential to provide an early warning and protective circuits for the system consisting of the initial degraded LEDs. Reliability studies on LN2-soaked InGaN/GaN LEDs show promise in studying the reliability issues of GaN device applications in Arctic regions and space exploration. •Cryogenic tests reveal spectral shifts in LEDs.•Line-shaped defects appear on GaN LED surface.•Machine vision detects early areas of degradation.•Reliability studies show promise for Space and Arctic applications. Cryogenic tests were conducted on blue InGaN/GaN light-emitting diodes (LEDs) by immersing the device in liquid nitrogen (LN2). To study the degradation of the LEDs, a combination of optical, electrical, and material characterizations were performed on the LN2-soaked device. The results indicate that noticeable emission spectral shifts were observed during the LED immersion due to lattice deformation. Moreover, clustering of cracks was generated in the cross-section, and line-shaped defects appeared on the surface of the GaN LED, which was different from the defects on AlInGaP LEDs after LN2 immersion. To track the trend of device damage, computer-assisted OpenCV-Python software was used to zoom in on nuanced variations in certain areas of the emission images. Early degradation of certain areas can be detected by computer-assisted machine vision, which has the potential to provide an early warning and protective circuits for the system consisting of the initial degraded LEDs. Reliability studies on LN2-soaked InGaN/GaN LEDs show promise in studying the reliability issues of GaN device applications in Arctic regions and space exploration. |
ArticleNumber | 106594 |
Author | Yang, Chun-Yen Yang, Shao-Jui Hon, Mou-Tuong Lin, You-Li Yu, Chih-Yuan Kang, Hsuan-Chia Kuo, Yaw-Wen Chou, Hsin-Hung Zhang, Yi-Zong Han, Jung Chen, Hsiang Lin, Chia-Feng Li, Yung-Hui Wu, You-Lin |
Author_xml | – sequence: 1 givenname: Chun-Yen surname: Yang fullname: Yang, Chun-Yen organization: Department of Electrical Engineering, National Chi Nan University, Nantou 54561, Taiwan – sequence: 2 givenname: Chih-Yuan surname: Yu fullname: Yu, Chih-Yuan organization: Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Nantou 54561, Taiwan – sequence: 3 givenname: You-Li surname: Lin fullname: Lin, You-Li organization: Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Nantou 54561, Taiwan – sequence: 4 givenname: Mou-Tuong surname: Hon fullname: Hon, Mou-Tuong organization: Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Nantou 54561, Taiwan – sequence: 5 givenname: Shao-Jui surname: Yang fullname: Yang, Shao-Jui organization: Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Nantou 54561, Taiwan – sequence: 6 givenname: Yi-Zong surname: Zhang fullname: Zhang, Yi-Zong organization: Department of Computer Science & Information Engineering, National Chi Nan University, Nantou 54561, Taiwan – sequence: 7 givenname: Hsuan-Chia surname: Kang fullname: Kang, Hsuan-Chia organization: Department of Computer Science & Information Engineering, National Chi Nan University, Nantou 54561, Taiwan – sequence: 8 givenname: Yaw-Wen surname: Kuo fullname: Kuo, Yaw-Wen organization: Department of Electrical Engineering, National Chi Nan University, Nantou 54561, Taiwan – sequence: 9 givenname: Chia-Feng surname: Lin fullname: Lin, Chia-Feng organization: Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan – sequence: 10 givenname: You-Lin surname: Wu fullname: Wu, You-Lin organization: Department of Electrical Engineering, National Chi Nan University, Nantou 54561, Taiwan – sequence: 11 givenname: Hsin-Hung surname: Chou fullname: Chou, Hsin-Hung email: chouhh@ncnu.edu.tw organization: Department of Computer Science & Information Engineering, National Chi Nan University, Nantou 54561, Taiwan – sequence: 12 givenname: Hsiang orcidid: 0000-0002-5325-9265 surname: Chen fullname: Chen, Hsiang email: hchen@ncnu.edu.tw organization: Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Nantou 54561, Taiwan – sequence: 13 givenname: Yung-Hui surname: Li fullname: Li, Yung-Hui organization: AI Research Center, Hon Hai Research Institute, Taipei 11494, Taiwan – sequence: 14 givenname: Jung surname: Han fullname: Han, Jung organization: Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA |
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Cites_doi | 10.1109/LED.2009.2029129 10.1109/TNS.2003.821374 10.1364/OL.452477 10.1016/j.nanoen.2019.104427 10.1364/OE.27.00A669 10.1063/1.4812231 10.1016/j.ijheatmasstransfer.2019.118926 10.4218/etrij.02.0102.0503 10.1109/16.34258 10.1016/S0166-4972(99)00166-2 10.1149/2.0541802jes 10.1109/TED.2006.885544 10.1007/s10854-021-07205-6 10.1109/IEDM.1988.32863 10.1109/TED.2006.877872 10.1109/TDMR.2015.2418345 10.1364/OE.25.026615 10.1016/B978-0-12-655280-5.50007-9 10.1109/TED.2022.3185957 10.1016/j.mee.2019.111158 10.1016/j.rinp.2020.103432 10.1002/lpor.202200455 10.1007/s00170-016-9581-5 10.1039/C6NR05638E 10.1063/1.122164 10.1109/55.2051 10.1063/1.1334361 10.1016/S0038-1101(99)00319-6 10.1039/D1NR08221C |
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Keywords | InGaN/GaN blue LED Machine vision Line defects Lattice deformation Liquid nitrogen |
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References | Fang, Frey, Menzler (b0005) 2018; 165 Hu (b0035) 2020; 69 Liang, Wong, Cheung, Sato (b0085) 1989; 36 Kim, Tak, Kim (b0110) 2013; 114 Zhou (b0040) 2022; 14 Chauhan, Surgenor (b0125) 2017; 90 Zhou (b0030) 2022; 47 Sheu, Chi, Su (b0150) 2000; 44 Zhou (b0045) 2019; 27 Catlow (b0140) 1981 Meneghini, Zehnder, Hahn (b0020) 2009; 30 Kao, Zang, Jhang (b0060) 2022; 69 Shahidi, Antoniadis, Smith (b0075) 1988; 9 R. Feng, C. Li, H. Chen Zhou (b0050) 2017; 25 S. Selberherr, MOS device modeling at liquid-nitrogen temperature, in Technical Digest., International Electron Devices Meeting, (IEEE, 1988), pp. 496–499. Meneghini, Trevisanello, Zehnder (b0015) 2006; 53 Chen, Lin, Lu (b0115) 2020; 19 Fan (b0025) 2023; 17 Siligaris (b0080) 2006; 53 Huang, Golubović, Koh (b0010) 2015; 15 Swift, Levanas, Ratliff (b0055) 2003; 50 Reed, El-Masry, Parker (b0155) 2000; 77 Oyebisi (b0090) 2000; 20 Lee, Hsieh, Chen (b0065) 2021; 32 H. Chang, and Y.-S. Lai, “Novel AC driver and protection circuits with dimming control for light emitting diodes.” pp. 696–700. Chen, Huang, Chiu (b0120) 2019; 218 “Removing diffraction image artifacts in under-display camera via dynamic skip connection network.” pp. 662–671. Cho, Gainer, Fischer (b0145) 1998; 73 Elsayed, Mesalhy, Kizito, Leland, Chow (b0095) 2020; 147 Park, Song, Anderson (b0100) 2002; 24 Zhao, Mao, Zhou (b0105) 2016; 8 Zhou (10.1016/j.rinp.2023.106594_b0040) 2022; 14 Shahidi (10.1016/j.rinp.2023.106594_b0075) 1988; 9 Catlow (10.1016/j.rinp.2023.106594_b0140) 1981 Lee (10.1016/j.rinp.2023.106594_b0065) 2021; 32 10.1016/j.rinp.2023.106594_b0070 Huang (10.1016/j.rinp.2023.106594_b0010) 2015; 15 Oyebisi (10.1016/j.rinp.2023.106594_b0090) 2000; 20 10.1016/j.rinp.2023.106594_b0135 Zhou (10.1016/j.rinp.2023.106594_b0030) 2022; 47 Elsayed (10.1016/j.rinp.2023.106594_b0095) 2020; 147 10.1016/j.rinp.2023.106594_b0130 Fan (10.1016/j.rinp.2023.106594_b0025) 2023; 17 Kim (10.1016/j.rinp.2023.106594_b0110) 2013; 114 Siligaris (10.1016/j.rinp.2023.106594_b0080) 2006; 53 Liang (10.1016/j.rinp.2023.106594_b0085) 1989; 36 Kao (10.1016/j.rinp.2023.106594_b0060) 2022; 69 Swift (10.1016/j.rinp.2023.106594_b0055) 2003; 50 Hu (10.1016/j.rinp.2023.106594_b0035) 2020; 69 Zhou (10.1016/j.rinp.2023.106594_b0045) 2019; 27 Zhao (10.1016/j.rinp.2023.106594_b0105) 2016; 8 Fang (10.1016/j.rinp.2023.106594_b0005) 2018; 165 Meneghini (10.1016/j.rinp.2023.106594_b0015) 2006; 53 Meneghini (10.1016/j.rinp.2023.106594_b0020) 2009; 30 Chauhan (10.1016/j.rinp.2023.106594_b0125) 2017; 90 Chen (10.1016/j.rinp.2023.106594_b0120) 2019; 218 Park (10.1016/j.rinp.2023.106594_b0100) 2002; 24 Cho (10.1016/j.rinp.2023.106594_b0145) 1998; 73 Sheu (10.1016/j.rinp.2023.106594_b0150) 2000; 44 Zhou (10.1016/j.rinp.2023.106594_b0050) 2017; 25 Chen (10.1016/j.rinp.2023.106594_b0115) 2020; 19 Reed (10.1016/j.rinp.2023.106594_b0155) 2000; 77 |
References_xml | – volume: 27 start-page: A669 year: 2019 end-page: A692 ident: b0045 article-title: Highly efficient GaN-based high-power flip-chip light-emitting diodes publication-title: Opt Express contributor: fullname: Zhou – volume: 19 year: 2020 ident: b0115 article-title: Deterioration of near-UV GaN-based LEDs in seawater vapour publication-title: Results Phys contributor: fullname: Lu – volume: 53 start-page: 1902 year: 2006 end-page: 1908 ident: b0080 article-title: High-frequency and noise performances of 65-nm MOSFET at liquid nitrogen temperature publication-title: IEEE Trans Electron Dev contributor: fullname: Siligaris – volume: 147 year: 2020 ident: b0095 article-title: Performance of a guided plate heat sink at high altitude publication-title: Int J Heat Mass Transfer contributor: fullname: Chow – volume: 15 start-page: 220 year: 2015 end-page: 228 ident: b0010 article-title: Degradation mechanisms of mid-power white-light LEDs under high-temperature–humidity conditions publication-title: IEEE Trans Device Mater Reliab contributor: fullname: Koh – volume: 47 start-page: 1291 year: 2022 end-page: 1294 ident: b0030 article-title: InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes publication-title: Opt Lett contributor: fullname: Zhou – volume: 44 start-page: 1055 year: 2000 end-page: 1058 ident: b0150 article-title: Luminescence of an InGaN/GaN multiple quantum well light-emitting diode publication-title: Solid State Electron contributor: fullname: Su – volume: 17 start-page: 2200455 year: 2023 ident: b0025 article-title: Monolithically integrating III-nitride quantum structure for full-spectrum white LED via bandgap engineering heteroepitaxial growth publication-title: Laser Photon Rev contributor: fullname: Fan – volume: 36 start-page: 1858 year: 1989 end-page: 1860 ident: b0085 article-title: Parasitic effects of surface states on GaAs MESFET characteristics at liquid-nitrogen temperature publication-title: IEEE Trans Electron Dev contributor: fullname: Sato – volume: 32 start-page: 28287 year: 2021 end-page: 28296 ident: b0065 article-title: Morphological, optical, and electrical characterizations and cryogenic reliability tests on AlInGaP red light emitting diodes immersed in liquid nitrogen publication-title: J Mater Sci Mater Electron contributor: fullname: Chen – volume: 14 start-page: 4887 year: 2022 end-page: 4907 ident: b0040 article-title: Application of patterned sapphire substrate for III-nitride light-emitting diodes publication-title: Nanoscale contributor: fullname: Zhou – volume: 114 year: 2013 ident: b0110 article-title: Analysis of forward tunneling current in InGaN/GaN multiple quantum well light-emitting diodes grown on Si (111) substrate publication-title: J Appl Phys contributor: fullname: Kim – volume: 50 start-page: 1991 year: 2003 end-page: 1997 ident: b0055 article-title: In-flight annealing of displacement damage in GaAs LEDs: a galileo story publication-title: IEEE Trans Nucl Sci contributor: fullname: Ratliff – volume: 165 start-page: F38 year: 2018 ident: b0005 article-title: Electrochemical performance and preliminary post-mortem analysis of a solid oxide cell stack with 20,000 h of operation publication-title: J Electrochem Soc contributor: fullname: Menzler – volume: 53 start-page: 2981 year: 2006 end-page: 2987 ident: b0015 article-title: High-temperature degradation of GaN LEDs related to passivation publication-title: IEEE Trans Electron Devices contributor: fullname: Zehnder – volume: 25 start-page: 26615 year: 2017 end-page: 26627 ident: b0050 article-title: Numerical and experimental investigation of GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts publication-title: Opt Express contributor: fullname: Zhou – volume: 9 start-page: 94 year: 1988 end-page: 96 ident: b0075 article-title: Electron velocity overshoot at room and liquid nitrogen temperatures in silicon inversion layers publication-title: IEEE Electron Dev Lett contributor: fullname: Smith – volume: 24 start-page: 349 year: 2002 end-page: 359 ident: b0100 article-title: Microstructure and electrical properties of low temperature processed ohmic contacts to p-type GaN publication-title: ETRI J contributor: fullname: Anderson – start-page: 61 year: 1981 end-page: 98 ident: b0140 article-title: Defect clustering in nonstoichiometric oxides publication-title: Nonstoichiom Oxides contributor: fullname: Catlow – volume: 77 start-page: 4121 year: 2000 end-page: 4123 ident: b0155 article-title: Critical layer thickness determination of GaN/InGaN/GaN double heterostructures publication-title: Appl Phys Lett contributor: fullname: Parker – volume: 90 start-page: 2491 year: 2017 end-page: 2512 ident: b0125 article-title: Fault detection and classification in automated assembly machines using machine vision publication-title: Int J Adv Manuf Technol contributor: fullname: Surgenor – volume: 218 year: 2019 ident: b0120 article-title: Degradation mechanisms of bias stress on nitride-based near-ultraviolet light-emitting diodes in salt water vapor ambient publication-title: Microelectron Eng contributor: fullname: Chiu – volume: 8 start-page: 18995 year: 2016 end-page: 19003 ident: b0105 article-title: Bandgap modulation of MoS 2 monolayer by thermal annealing and quick cooling publication-title: Nanoscale contributor: fullname: Zhou – volume: 69 start-page: 4386 year: 2022 end-page: 4391 ident: b0060 article-title: Pre-diagnosis of failure spots in orange AlInGaP light-emitting diodes soaked in liquid nitrogen using machine vision and multiple optical, electrical, and material characterizations publication-title: IEEE Trans Electron Devices contributor: fullname: Jhang – volume: 30 start-page: 1051 year: 2009 end-page: 1053 ident: b0020 article-title: Degradation of high-brightness green LEDs submitted to reverse electrical stress publication-title: IEEE Electron Device Lett contributor: fullname: Hahn – volume: 69 year: 2020 ident: b0035 article-title: Boosted ultraviolet electroluminescence of InGaN/AlGaN quantum structures grown on high-index contrast patterned sapphire with silica array publication-title: Nano Energy contributor: fullname: Hu – volume: 20 start-page: 517 year: 2000 end-page: 522 ident: b0090 article-title: On reliability and maintenance management of electronic equipment in the tropics publication-title: Technovation contributor: fullname: Oyebisi – volume: 73 start-page: 1370 year: 1998 end-page: 1372 ident: b0145 article-title: “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells publication-title: Appl Phys Lett contributor: fullname: Fischer – volume: 30 start-page: 1051 issue: 10 year: 2009 ident: 10.1016/j.rinp.2023.106594_b0020 article-title: Degradation of high-brightness green LEDs submitted to reverse electrical stress publication-title: IEEE Electron Device Lett doi: 10.1109/LED.2009.2029129 contributor: fullname: Meneghini – volume: 50 start-page: 1991 issue: 6 year: 2003 ident: 10.1016/j.rinp.2023.106594_b0055 article-title: In-flight annealing of displacement damage in GaAs LEDs: a galileo story publication-title: IEEE Trans Nucl Sci doi: 10.1109/TNS.2003.821374 contributor: fullname: Swift – volume: 47 start-page: 1291 issue: 5 year: 2022 ident: 10.1016/j.rinp.2023.106594_b0030 article-title: InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes publication-title: Opt Lett doi: 10.1364/OL.452477 contributor: fullname: Zhou – volume: 69 year: 2020 ident: 10.1016/j.rinp.2023.106594_b0035 article-title: Boosted ultraviolet electroluminescence of InGaN/AlGaN quantum structures grown on high-index contrast patterned sapphire with silica array publication-title: Nano Energy doi: 10.1016/j.nanoen.2019.104427 contributor: fullname: Hu – volume: 27 start-page: A669 issue: 12 year: 2019 ident: 10.1016/j.rinp.2023.106594_b0045 article-title: Highly efficient GaN-based high-power flip-chip light-emitting diodes publication-title: Opt Express doi: 10.1364/OE.27.00A669 contributor: fullname: Zhou – volume: 114 issue: 1 year: 2013 ident: 10.1016/j.rinp.2023.106594_b0110 article-title: Analysis of forward tunneling current in InGaN/GaN multiple quantum well light-emitting diodes grown on Si (111) substrate publication-title: J Appl Phys doi: 10.1063/1.4812231 contributor: fullname: Kim – volume: 147 year: 2020 ident: 10.1016/j.rinp.2023.106594_b0095 article-title: Performance of a guided plate heat sink at high altitude publication-title: Int J Heat Mass Transfer doi: 10.1016/j.ijheatmasstransfer.2019.118926 contributor: fullname: Elsayed – volume: 24 start-page: 349 issue: 5 year: 2002 ident: 10.1016/j.rinp.2023.106594_b0100 article-title: Microstructure and electrical properties of low temperature processed ohmic contacts to p-type GaN publication-title: ETRI J doi: 10.4218/etrij.02.0102.0503 contributor: fullname: Park – ident: 10.1016/j.rinp.2023.106594_b0130 – volume: 36 start-page: 1858 issue: 9 year: 1989 ident: 10.1016/j.rinp.2023.106594_b0085 article-title: Parasitic effects of surface states on GaAs MESFET characteristics at liquid-nitrogen temperature publication-title: IEEE Trans Electron Dev doi: 10.1109/16.34258 contributor: fullname: Liang – volume: 20 start-page: 517 issue: 9 year: 2000 ident: 10.1016/j.rinp.2023.106594_b0090 article-title: On reliability and maintenance management of electronic equipment in the tropics publication-title: Technovation doi: 10.1016/S0166-4972(99)00166-2 contributor: fullname: Oyebisi – volume: 165 start-page: F38 issue: 2 year: 2018 ident: 10.1016/j.rinp.2023.106594_b0005 article-title: Electrochemical performance and preliminary post-mortem analysis of a solid oxide cell stack with 20,000 h of operation publication-title: J Electrochem Soc doi: 10.1149/2.0541802jes contributor: fullname: Fang – volume: 53 start-page: 2981 issue: 12 year: 2006 ident: 10.1016/j.rinp.2023.106594_b0015 article-title: High-temperature degradation of GaN LEDs related to passivation publication-title: IEEE Trans Electron Devices doi: 10.1109/TED.2006.885544 contributor: fullname: Meneghini – volume: 32 start-page: 28287 issue: 24 year: 2021 ident: 10.1016/j.rinp.2023.106594_b0065 article-title: Morphological, optical, and electrical characterizations and cryogenic reliability tests on AlInGaP red light emitting diodes immersed in liquid nitrogen publication-title: J Mater Sci Mater Electron doi: 10.1007/s10854-021-07205-6 contributor: fullname: Lee – ident: 10.1016/j.rinp.2023.106594_b0070 doi: 10.1109/IEDM.1988.32863 – volume: 53 start-page: 1902 issue: 8 year: 2006 ident: 10.1016/j.rinp.2023.106594_b0080 article-title: High-frequency and noise performances of 65-nm MOSFET at liquid nitrogen temperature publication-title: IEEE Trans Electron Dev doi: 10.1109/TED.2006.877872 contributor: fullname: Siligaris – volume: 15 start-page: 220 issue: 2 year: 2015 ident: 10.1016/j.rinp.2023.106594_b0010 article-title: Degradation mechanisms of mid-power white-light LEDs under high-temperature–humidity conditions publication-title: IEEE Trans Device Mater Reliab doi: 10.1109/TDMR.2015.2418345 contributor: fullname: Huang – volume: 25 start-page: 26615 issue: 22 year: 2017 ident: 10.1016/j.rinp.2023.106594_b0050 article-title: Numerical and experimental investigation of GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts publication-title: Opt Express doi: 10.1364/OE.25.026615 contributor: fullname: Zhou – start-page: 61 year: 1981 ident: 10.1016/j.rinp.2023.106594_b0140 article-title: Defect clustering in nonstoichiometric oxides publication-title: Nonstoichiom Oxides doi: 10.1016/B978-0-12-655280-5.50007-9 contributor: fullname: Catlow – volume: 69 start-page: 4386 issue: 8 year: 2022 ident: 10.1016/j.rinp.2023.106594_b0060 article-title: Pre-diagnosis of failure spots in orange AlInGaP light-emitting diodes soaked in liquid nitrogen using machine vision and multiple optical, electrical, and material characterizations publication-title: IEEE Trans Electron Devices doi: 10.1109/TED.2022.3185957 contributor: fullname: Kao – volume: 218 year: 2019 ident: 10.1016/j.rinp.2023.106594_b0120 article-title: Degradation mechanisms of bias stress on nitride-based near-ultraviolet light-emitting diodes in salt water vapor ambient publication-title: Microelectron Eng doi: 10.1016/j.mee.2019.111158 contributor: fullname: Chen – volume: 19 year: 2020 ident: 10.1016/j.rinp.2023.106594_b0115 article-title: Deterioration of near-UV GaN-based LEDs in seawater vapour publication-title: Results Phys doi: 10.1016/j.rinp.2020.103432 contributor: fullname: Chen – volume: 17 start-page: 2200455 issue: 3 year: 2023 ident: 10.1016/j.rinp.2023.106594_b0025 article-title: Monolithically integrating III-nitride quantum structure for full-spectrum white LED via bandgap engineering heteroepitaxial growth publication-title: Laser Photon Rev doi: 10.1002/lpor.202200455 contributor: fullname: Fan – volume: 90 start-page: 2491 issue: 9 year: 2017 ident: 10.1016/j.rinp.2023.106594_b0125 article-title: Fault detection and classification in automated assembly machines using machine vision publication-title: Int J Adv Manuf Technol doi: 10.1007/s00170-016-9581-5 contributor: fullname: Chauhan – volume: 8 start-page: 18995 issue: 45 year: 2016 ident: 10.1016/j.rinp.2023.106594_b0105 article-title: Bandgap modulation of MoS 2 monolayer by thermal annealing and quick cooling publication-title: Nanoscale doi: 10.1039/C6NR05638E contributor: fullname: Zhao – volume: 73 start-page: 1370 issue: 10 year: 1998 ident: 10.1016/j.rinp.2023.106594_b0145 article-title: “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells publication-title: Appl Phys Lett doi: 10.1063/1.122164 contributor: fullname: Cho – volume: 9 start-page: 94 issue: 2 year: 1988 ident: 10.1016/j.rinp.2023.106594_b0075 article-title: Electron velocity overshoot at room and liquid nitrogen temperatures in silicon inversion layers publication-title: IEEE Electron Dev Lett doi: 10.1109/55.2051 contributor: fullname: Shahidi – volume: 77 start-page: 4121 issue: 25 year: 2000 ident: 10.1016/j.rinp.2023.106594_b0155 article-title: Critical layer thickness determination of GaN/InGaN/GaN double heterostructures publication-title: Appl Phys Lett doi: 10.1063/1.1334361 contributor: fullname: Reed – ident: 10.1016/j.rinp.2023.106594_b0135 – volume: 44 start-page: 1055 issue: 6 year: 2000 ident: 10.1016/j.rinp.2023.106594_b0150 article-title: Luminescence of an InGaN/GaN multiple quantum well light-emitting diode publication-title: Solid State Electron doi: 10.1016/S0038-1101(99)00319-6 contributor: fullname: Sheu – volume: 14 start-page: 4887 year: 2022 ident: 10.1016/j.rinp.2023.106594_b0040 article-title: Application of patterned sapphire substrate for III-nitride light-emitting diodes publication-title: Nanoscale doi: 10.1039/D1NR08221C contributor: fullname: Zhou |
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Snippet | •Cryogenic tests reveal spectral shifts in LEDs.•Line-shaped defects appear on GaN LED surface.•Machine vision detects early areas of degradation.•Reliability... Cryogenic tests were conducted on blue InGaN/GaN light-emitting diodes (LEDs) by immersing the device in liquid nitrogen (LN2). To study the degradation of the... |
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SubjectTerms | InGaN/GaN blue LED Lattice deformation Line defects Liquid nitrogen Machine vision |
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Title | Machine vision inspection of early failure and line-shaped defects of blue InGaN/GaN light emitting diodes soaked in liquid nitrogen for cryogenic tests |
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