Characteristics of multilayered plasma-polymer thin films using toluene and TEOS by PECVD

• Published in: Microelectronic engineering Vol. 89; pp. 19 - 22
• Main Authors: Cho, Sang-Jin, Boo, Jin-Hyo
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 2012; Elsevier
• Subjects: Applied sciences; Chemical vapor deposition; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Dielectric properties of solids and liquids; Dielectric thin films; Dielectric, amorphous and glass solid devices; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Electronics; Exact sciences and technology; Interlayer dielectric; Low- κ; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Multilayer; Multilayers; PECVD; Permittivity (dielectric function); Physics; Plasma polymer; Polymeric films; Precursors; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon substrates; Thin films; Toluene; Low- κ; Plasma polymer; PECVD; Multilayer; Interlayer dielectric; Interfacial layer; Fourier transformation; Low-κ; Hydrogen; Thin films; Multilayers; Microelectronic fabrication; Ambient temperature; Silicon; Chemical properties; Argon; Polymers; Permittivity; Low k dielectric; Electrical characteristic; Scanning electron microscopy; Electrical properties; Toluene; Polymer films; Radiofrequency; Thin film capacitors; Field emission electron microscopy; Thickness; Dielectric thin films
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2011.04.004

Multilayered plasma-polymer thin films were deposited on silicon (1 0 0) substrates with the alternate injection of each precursor at room temperature via the plasma enhanced chemical vapor deposition (PECVD) method. TEOS-toluene plasma polymer thin films. Plasma-polymer thin film capacitances were measured to determine the dielectric constant at 1 MHz. The different number of organic and inorganic plasma polymer layers resulted in differences in dielectric constant. [Display omitted] ► We investigated the alternate multilayer ultralow-k TEOS-toluene plasma-polymer thin films. ► Similar dielectric constants were observed by samples with similar IR spectra. ► The toluene top layer group demonstrated applicable anti-moisture performance. ► Increasing the thickness of TEOS layers resulted in increased thermal stability. ► M2 sample shows the lowest dielectric constant in each condition. This study investigated the interaction of alternate multilayer ultralow-k TEOS (tetraethoxysilane)-toluene plasma-polymer thin films, as well as their electrical and chemical properties. Multilayered plasma-polymer thin films were deposited on silicon (1 0 0) substrates with the alternate injection of each precursor at room temperature via the plasma enhanced chemical vapor deposition (PECVD) method. Toluene and TEOS were prepared as the organic and inorganic precursors, and hydrogen and argon gases were used as the bubbler and carrier gases, respectively. To compare differences in the electrical and chemical properties of the multilayer plasma-polymer thin films, the hybrid polymer thin films were grown under 30 W of RF (radio frequency using 13.56 MHz) power with different proportions of toluene and TEOS polymer layer in the same total thickness. The as-grown plasma polymer thin films were in first analyzed by using FT-IR (Fourier transform infrared) and FE-SEM (field emission scanning electron microscopy). FT-IR results showed that the hybrid polymer thin films were totally fragmented and polymerized by PECVD. SEM cross sectional images showed alternate TEOS-toluene plasma polymer thin films. Plasma-polymer thin film capacitances were measured to determine the dielectric constant at 1 MHz.