Effect of a Cu seed layer on electroplated Cu film

[Display omitted] ► The morphology of the electroplated Cu films is influenced by the Cu layers. ► The hardness of the electroplated Cu film is influenced by Cu seed layer. ► The Cu film adhesion is influenced by Cu seed layer. ► The Cu film is less corrosion-resistant when its roughness value is hi...

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Published inMicroelectronic engineering Vol. 105; pp. 18 - 24
Main Authors Pan, Yan, Liu, Yuhong, Wang, Tongqing, Lu, Xinchun
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.05.2013
Elsevier
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Abstract [Display omitted] ► The morphology of the electroplated Cu films is influenced by the Cu layers. ► The hardness of the electroplated Cu film is influenced by Cu seed layer. ► The Cu film adhesion is influenced by Cu seed layer. ► The Cu film is less corrosion-resistant when its roughness value is higher. Cu films with different thicknesses were electroplated onto Cu seed layers. Cu seed layers with different thicknesses were sputtered on a Ta barrier layer; the thickness of Cu seed layer was varied by changing the sputtering time. To investigate the influence of the Cu seed layers on the performance of the electroplated Cu films, the morphology, grain size, crystallographic orientation, and mechanical and chemical properties of the electroplated Cu films are presented in this paper. As the thickness of the Cu seed layer increases, the grain size increases, and the surface morphology changes from flat to rough to smooth. The adhesion of the Cu seed layers to the substrate increases with increasing thickness of the Cu seed layers but eventually decreases. After the electroplated Cu films are deposited, the morphology, grain size, and crystallographic orientation of the electroplated Cu films are significantly influenced by the seed layers. The hardness of the electroplated Cu film increases with the thickness of the Cu seed layer, and finally reaches a constant value. The adhesion between the Cu film and the substrates is influenced by the Cu seed layer as indicated by the morphology of the film. The Cu film is less corrosion-resistant when its roughness value is higher. Better mechanical and chemical properties are obtained when the thickness of the Cu seed layer is 150nm.
AbstractList [Display omitted] ► The morphology of the electroplated Cu films is influenced by the Cu layers. ► The hardness of the electroplated Cu film is influenced by Cu seed layer. ► The Cu film adhesion is influenced by Cu seed layer. ► The Cu film is less corrosion-resistant when its roughness value is higher. Cu films with different thicknesses were electroplated onto Cu seed layers. Cu seed layers with different thicknesses were sputtered on a Ta barrier layer; the thickness of Cu seed layer was varied by changing the sputtering time. To investigate the influence of the Cu seed layers on the performance of the electroplated Cu films, the morphology, grain size, crystallographic orientation, and mechanical and chemical properties of the electroplated Cu films are presented in this paper. As the thickness of the Cu seed layer increases, the grain size increases, and the surface morphology changes from flat to rough to smooth. The adhesion of the Cu seed layers to the substrate increases with increasing thickness of the Cu seed layers but eventually decreases. After the electroplated Cu films are deposited, the morphology, grain size, and crystallographic orientation of the electroplated Cu films are significantly influenced by the seed layers. The hardness of the electroplated Cu film increases with the thickness of the Cu seed layer, and finally reaches a constant value. The adhesion between the Cu film and the substrates is influenced by the Cu seed layer as indicated by the morphology of the film. The Cu film is less corrosion-resistant when its roughness value is higher. Better mechanical and chemical properties are obtained when the thickness of the Cu seed layer is 150nm.
Cu films with different thicknesses were electroplated onto Cu seed layers. Cu seed layers with different thicknesses were sputtered on a Ta barrier layer; the thickness of Cu seed layer was varied by changing the sputtering time. To investigate the influence of the Cu seed layers on the performance of the electroplated Cu films, the morphology, grain size, crystallographic orientation, and mechanical and chemical properties of the electroplated Cu films are presented in this paper. As the thickness of the Cu seed layer increases, the grain size increases, and the surface morphology changes from flat to rough to smooth. The adhesion of the Cu seed layers to the substrate increases with increasing thickness of the Cu seed layers but eventually decreases. After the electroplated Cu films are deposited, the morphology, grain size, and crystallographic orientation of the electroplated Cu films are significantly influenced by the seed layers. The hardness of the electroplated Cu film increases with the thickness of the Cu seed layer, and finally reaches a constant value. The adhesion between the Cu film and the substrates is influenced by the Cu seed layer as indicated by the morphology of the film. The Cu film is less corrosion-resistant when its roughness value is higher. Better mechanical and chemical properties are obtained when the thickness of the Cu seed layer is 150 nm.
Author Lu, Xinchun
Wang, Tongqing
Pan, Yan
Liu, Yuhong
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Cites_doi 10.1016/S0167-9317(97)00101-9
10.1063/1.1563048
10.1103/PhysRev.56.978
10.1163/156856101317048662
10.1016/S0013-4686(99)00261-3
10.1007/s11664-007-0354-7
10.1007/s11664-003-0085-3
10.1016/j.tsf.2005.06.037
10.1149/1.2171813
10.1063/1.1319322
10.1149/1.1408634
10.1107/S0021889882012035
10.1146/annurev.matsci.30.1.229
10.1016/j.apsusc.2007.05.014
10.1147/rd.425.0567
10.1063/1.369624
10.1063/1.2164535
10.1063/1.2401647
10.1107/S0021889878012601
10.1016/j.actamat.2005.09.017
10.1063/1.1702337
10.1149/1.3254163
10.1149/1.2994631
10.1149/1.1572152
10.1149/1.2409477
10.1116/1.1795831
10.1109/ITHERM.2004.1318336
10.1016/S0921-5107(02)00093-4
10.1016/j.apsusc.2006.03.002
10.1149/1.1867672
10.1063/1.1583866
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Keywords Electroplate
Cu film
Corrosion
Mechanical property
Sputtering
Performance evaluation
Grain size analysis
Barrier layer
Crystal orientation
Roughness
Texture
Surface structure
Microelectronic fabrication
Hardness testing
Chemical properties
Copper
Grain size
Crystallographic direction
Surface morphology
Mechanical properties
Grain orientation
Hardness
Adhesion
Layer thickness
Corrosion resistance
Sputter deposition
Microstructure
Language English
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References Kang, Gewirth (b0095) 2003; 150
Haebum, Lopatin (b0035) 2005; 492
Vanasupa, Joo, Besser, Pramanick (b0065) 1999; 85
Armini, Whelan, Moinpour, Maex (b0085) 2009; 156
Liu, Tsao, Tsai, Wang (b0180) 2004; 22
Ge, Tuominen, Kivilahti (b0150) 2001; 15
Lee, Lee, Sohn, Kang (b0090) 2006; 9
Feng (b0145) 1952; 23
S. Shojaei Zadeh, S. Zhang, W. Liu, Y. Yang, S.M. Sadeghipour, M. Asheghi, P. Sverdrup, Thermal characterization of thin film cu interconnects for the next generation of microelectronic devices, in: Therm. Phenom. Electron. Syst. Proc. Intersoc. Conf., 2004, pp. 575–583.
Rober, Riedel, Schulz, Gessner (b0020) 1997; 37–8
Detavernier, Deduytsche, Van Meirhaeghe, De Baerdemaeker, Dauwe (b0050) 2003; 82
Andersen, Bentancur, Moll, Frary (b0170) 2010; 157
Bloomfield, Bentz, Cale (b0040) 2008; 37
El Sayed, Greiner, Kruse (b0025) 2007; 253
Huang, Wei, Woo, Zhang (b0055) 2003; 82
Paik, Park, Joo, Park (b0190) 2006; 99
Li, Li (b0165) 2006; 54
Pantleon, Somers (b0185) 2006; 100
Andricacos, Uzoh, Dukovic, Horkans, Deligianni (b0015) 1998; 42
Ahmed, Buckley, Nakahara, Ahmed, Kuo (b0100) 2007; 154
Langford (b0130) 1978; 11
Siker, Kumar, Shukla, Zantye, Sanganaria (b0140) 2003; 32
Hebert (b0105) 2001; 148
Hasegawa, Negishi, Nakanishi, Osaka (b0115) 2005; 152
Lee, Lopatin (b0160) 2005; 492
Yamaguchi (b0060) 2001; 89
Patterson (b0120) 1939; 56
Rosenberg, Edelstein, Hu, Rodbell (b0005) 2000; 30
Latt, Lee, Osipowicz, Park (b0070) 2002; 94
Ziegler, Wielgosz, Kolb (b0030) 1999; 45
Dekeijser, Langford, Mittemeijer, Vogels (b0135) 1982; 15
Jackson, Broadbent, Cacouris, Harrus, Biberger, Patton, Walsh (b0010) 1998; 41
Xie, Qu, Tan, Jiang, Zhou, Chen, Ru (b0075) 2006; 253
Traving, Schindler, Steinlesberger, Steinhogl, Engelhardt (b0080) 2003; 26
Lee (10.1016/j.mee.2012.12.004_b0090) 2006; 9
Andersen (10.1016/j.mee.2012.12.004_b0170) 2010; 157
Hasegawa (10.1016/j.mee.2012.12.004_b0115) 2005; 152
Xie (10.1016/j.mee.2012.12.004_b0075) 2006; 253
Ziegler (10.1016/j.mee.2012.12.004_b0030) 1999; 45
Paik (10.1016/j.mee.2012.12.004_b0190) 2006; 99
Ahmed (10.1016/j.mee.2012.12.004_b0100) 2007; 154
Bloomfield (10.1016/j.mee.2012.12.004_b0040) 2008; 37
Detavernier (10.1016/j.mee.2012.12.004_b0050) 2003; 82
Haebum (10.1016/j.mee.2012.12.004_b0035) 2005; 492
Pantleon (10.1016/j.mee.2012.12.004_b0185) 2006; 100
Lee (10.1016/j.mee.2012.12.004_b0160) 2005; 492
Ge (10.1016/j.mee.2012.12.004_b0150) 2001; 15
Dekeijser (10.1016/j.mee.2012.12.004_b0135) 1982; 15
Traving (10.1016/j.mee.2012.12.004_b0080) 2003; 26
Siker (10.1016/j.mee.2012.12.004_b0140) 2003; 32
Liu (10.1016/j.mee.2012.12.004_b0180) 2004; 22
Langford (10.1016/j.mee.2012.12.004_b0130) 1978; 11
El Sayed (10.1016/j.mee.2012.12.004_b0025) 2007; 253
10.1016/j.mee.2012.12.004_b0175
Hebert (10.1016/j.mee.2012.12.004_b0105) 2001; 148
Li (10.1016/j.mee.2012.12.004_b0165) 2006; 54
Latt (10.1016/j.mee.2012.12.004_b0070) 2002; 94
Yamaguchi (10.1016/j.mee.2012.12.004_b0060) 2001; 89
Vanasupa (10.1016/j.mee.2012.12.004_b0065) 1999; 85
Jackson (10.1016/j.mee.2012.12.004_b0010) 1998; 41
Huang (10.1016/j.mee.2012.12.004_b0055) 2003; 82
Feng (10.1016/j.mee.2012.12.004_b0145) 1952; 23
Andricacos (10.1016/j.mee.2012.12.004_b0015) 1998; 42
Kang (10.1016/j.mee.2012.12.004_b0095) 2003; 150
Rober (10.1016/j.mee.2012.12.004_b0020) 1997; 37–8
Armini (10.1016/j.mee.2012.12.004_b0085) 2009; 156
Patterson (10.1016/j.mee.2012.12.004_b0120) 1939; 56
Rosenberg (10.1016/j.mee.2012.12.004_b0005) 2000; 30
References_xml – volume: 37–8
  start-page: 111
  year: 1997
  end-page: 119
  ident: b0020
  publication-title: Microelectron. Eng.
– volume: 492
  start-page: 279
  year: 2005
  end-page: 284
  ident: b0035
  publication-title: Thin Solid Films
– volume: 9
  start-page: C65
  year: 2006
  end-page: C68
  ident: b0090
  publication-title: Electrochem. Solid-State Lett.
– volume: 82
  start-page: 4265
  year: 2003
  end-page: 4267
  ident: b0055
  publication-title: Appl. Phys. Lett.
– volume: 150
  start-page: C426
  year: 2003
  end-page: C434
  ident: b0095
  publication-title: J. Electrochem. Soc.
– volume: 11
  start-page: 10
  year: 1978
  end-page: 14
  ident: b0130
  publication-title: J. Appl. Crystallogr.
– volume: 99
  year: 2006
  ident: b0190
  publication-title: J. Appl. Phys.
– volume: 26
  start-page: 73
  year: 2003
  end-page: 78
  ident: b0080
  publication-title: Semicond. Int.
– volume: 89
  start-page: 590
  year: 2001
  end-page: 595
  ident: b0060
  publication-title: J. Appl. Phys.
– volume: 253
  start-page: 1666
  year: 2006
  end-page: 1672
  ident: b0075
  publication-title: Appl. Surf. Sci.
– volume: 32
  start-page: 1028
  year: 2003
  end-page: 1033
  ident: b0140
  publication-title: J. Electron. Mater.
– volume: 54
  start-page: 445
  year: 2006
  end-page: 452
  ident: b0165
  publication-title: Acta Mater.
– volume: 56
  start-page: 978
  year: 1939
  end-page: 982
  ident: b0120
  publication-title: Phys. Rev.
– volume: 45
  start-page: 827
  year: 1999
  end-page: 833
  ident: b0030
  publication-title: Electrochim. Acta
– volume: 156
  start-page: H18
  year: 2009
  end-page: H26
  ident: b0085
  publication-title: J. Electrochem. Soc.
– volume: 85
  start-page: 2583
  year: 1999
  ident: b0065
  publication-title: J. Appl. Phys.
– volume: 15
  start-page: 308
  year: 1982
  end-page: 314
  ident: b0135
  publication-title: J. Appl. Crystallogr.
– volume: 148
  start-page: C726
  year: 2001
  end-page: C732
  ident: b0105
  publication-title: J. Electrochem. Soc.
– volume: 152
  start-page: C221
  year: 2005
  end-page: C228
  ident: b0115
  publication-title: J. Electrochem. Soc.
– volume: 154
  start-page: D103
  year: 2007
  end-page: D112
  ident: b0100
  publication-title: J. Electrochem. Soc.
– volume: 94
  start-page: 111
  year: 2002
  end-page: 120
  ident: b0070
  publication-title: Mater. Sci. Eng. B
– volume: 23
  start-page: 1011
  year: 1952
  end-page: 1019
  ident: b0145
  publication-title: J. Appl. Phys.
– volume: 30
  start-page: 229
  year: 2000
  end-page: 262
  ident: b0005
  publication-title: Annu. Rev. Mater. Sci.
– volume: 100
  year: 2006
  ident: b0185
  publication-title: J. Appl. Phys.
– volume: 15
  start-page: 1133
  year: 2001
  end-page: 1143
  ident: b0150
  publication-title: J. Adhes. Sci. Technol.
– volume: 157
  start-page: H120
  year: 2010
  ident: b0170
  publication-title: J. Electrochem. Soc.
– volume: 41
  start-page: 49
  year: 1998
  end-page: 59
  ident: b0010
  publication-title: Solid State Technol.
– volume: 42
  start-page: 567
  year: 1998
  end-page: 574
  ident: b0015
  publication-title: IBM J. Res. Dev.
– volume: 37
  start-page: 249
  year: 2008
  end-page: 263
  ident: b0040
  publication-title: J. Electron. Mater.
– volume: 22
  start-page: 2315
  year: 2004
  end-page: 2320
  ident: b0180
  publication-title: J. Vac. Sci. Technol., A
– reference: S. Shojaei Zadeh, S. Zhang, W. Liu, Y. Yang, S.M. Sadeghipour, M. Asheghi, P. Sverdrup, Thermal characterization of thin film cu interconnects for the next generation of microelectronic devices, in: Therm. Phenom. Electron. Syst. Proc. Intersoc. Conf., 2004, pp. 575–583.
– volume: 82
  start-page: 1863
  year: 2003
  end-page: 1865
  ident: b0050
  publication-title: Appl. Phys. Lett.
– volume: 253
  start-page: 8962
  year: 2007
  end-page: 8968
  ident: b0025
  publication-title: Appl. Surf. Sci.
– volume: 492
  start-page: 279
  year: 2005
  end-page: 284
  ident: b0160
  publication-title: Thin Solid Films
– volume: 41
  start-page: 49
  year: 1998
  ident: 10.1016/j.mee.2012.12.004_b0010
  publication-title: Solid State Technol.
– volume: 37–8
  start-page: 111
  year: 1997
  ident: 10.1016/j.mee.2012.12.004_b0020
  publication-title: Microelectron. Eng.
  doi: 10.1016/S0167-9317(97)00101-9
– volume: 82
  start-page: 1863
  year: 2003
  ident: 10.1016/j.mee.2012.12.004_b0050
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.1563048
– volume: 56
  start-page: 978
  year: 1939
  ident: 10.1016/j.mee.2012.12.004_b0120
  publication-title: Phys. Rev.
  doi: 10.1103/PhysRev.56.978
– volume: 15
  start-page: 1133
  year: 2001
  ident: 10.1016/j.mee.2012.12.004_b0150
  publication-title: J. Adhes. Sci. Technol.
  doi: 10.1163/156856101317048662
– volume: 45
  start-page: 827
  year: 1999
  ident: 10.1016/j.mee.2012.12.004_b0030
  publication-title: Electrochim. Acta
  doi: 10.1016/S0013-4686(99)00261-3
– volume: 37
  start-page: 249
  year: 2008
  ident: 10.1016/j.mee.2012.12.004_b0040
  publication-title: J. Electron. Mater.
  doi: 10.1007/s11664-007-0354-7
– volume: 32
  start-page: 1028
  year: 2003
  ident: 10.1016/j.mee.2012.12.004_b0140
  publication-title: J. Electron. Mater.
  doi: 10.1007/s11664-003-0085-3
– volume: 492
  start-page: 279
  year: 2005
  ident: 10.1016/j.mee.2012.12.004_b0160
  publication-title: Thin Solid Films
  doi: 10.1016/j.tsf.2005.06.037
– volume: 9
  start-page: C65
  year: 2006
  ident: 10.1016/j.mee.2012.12.004_b0090
  publication-title: Electrochem. Solid-State Lett.
  doi: 10.1149/1.2171813
– volume: 89
  start-page: 590
  year: 2001
  ident: 10.1016/j.mee.2012.12.004_b0060
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.1319322
– volume: 148
  start-page: C726
  year: 2001
  ident: 10.1016/j.mee.2012.12.004_b0105
  publication-title: J. Electrochem. Soc.
  doi: 10.1149/1.1408634
– volume: 15
  start-page: 308
  year: 1982
  ident: 10.1016/j.mee.2012.12.004_b0135
  publication-title: J. Appl. Crystallogr.
  doi: 10.1107/S0021889882012035
– volume: 30
  start-page: 229
  year: 2000
  ident: 10.1016/j.mee.2012.12.004_b0005
  publication-title: Annu. Rev. Mater. Sci.
  doi: 10.1146/annurev.matsci.30.1.229
– volume: 253
  start-page: 8962
  year: 2007
  ident: 10.1016/j.mee.2012.12.004_b0025
  publication-title: Appl. Surf. Sci.
  doi: 10.1016/j.apsusc.2007.05.014
– volume: 26
  start-page: 73
  year: 2003
  ident: 10.1016/j.mee.2012.12.004_b0080
  publication-title: Semicond. Int.
– volume: 42
  start-page: 567
  year: 1998
  ident: 10.1016/j.mee.2012.12.004_b0015
  publication-title: IBM J. Res. Dev.
  doi: 10.1147/rd.425.0567
– volume: 85
  start-page: 2583
  year: 1999
  ident: 10.1016/j.mee.2012.12.004_b0065
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.369624
– volume: 99
  year: 2006
  ident: 10.1016/j.mee.2012.12.004_b0190
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.2164535
– volume: 100
  year: 2006
  ident: 10.1016/j.mee.2012.12.004_b0185
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.2401647
– volume: 11
  start-page: 10
  year: 1978
  ident: 10.1016/j.mee.2012.12.004_b0130
  publication-title: J. Appl. Crystallogr.
  doi: 10.1107/S0021889878012601
– volume: 54
  start-page: 445
  year: 2006
  ident: 10.1016/j.mee.2012.12.004_b0165
  publication-title: Acta Mater.
  doi: 10.1016/j.actamat.2005.09.017
– volume: 492
  start-page: 279
  year: 2005
  ident: 10.1016/j.mee.2012.12.004_b0035
  publication-title: Thin Solid Films
  doi: 10.1016/j.tsf.2005.06.037
– volume: 23
  start-page: 1011
  year: 1952
  ident: 10.1016/j.mee.2012.12.004_b0145
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.1702337
– volume: 157
  start-page: H120
  year: 2010
  ident: 10.1016/j.mee.2012.12.004_b0170
  publication-title: J. Electrochem. Soc.
  doi: 10.1149/1.3254163
– volume: 156
  start-page: H18
  year: 2009
  ident: 10.1016/j.mee.2012.12.004_b0085
  publication-title: J. Electrochem. Soc.
  doi: 10.1149/1.2994631
– volume: 150
  start-page: C426
  year: 2003
  ident: 10.1016/j.mee.2012.12.004_b0095
  publication-title: J. Electrochem. Soc.
  doi: 10.1149/1.1572152
– volume: 154
  start-page: D103
  year: 2007
  ident: 10.1016/j.mee.2012.12.004_b0100
  publication-title: J. Electrochem. Soc.
  doi: 10.1149/1.2409477
– volume: 22
  start-page: 2315
  year: 2004
  ident: 10.1016/j.mee.2012.12.004_b0180
  publication-title: J. Vac. Sci. Technol., A
  doi: 10.1116/1.1795831
– ident: 10.1016/j.mee.2012.12.004_b0175
  doi: 10.1109/ITHERM.2004.1318336
– volume: 94
  start-page: 111
  year: 2002
  ident: 10.1016/j.mee.2012.12.004_b0070
  publication-title: Mater. Sci. Eng. B
  doi: 10.1016/S0921-5107(02)00093-4
– volume: 253
  start-page: 1666
  year: 2006
  ident: 10.1016/j.mee.2012.12.004_b0075
  publication-title: Appl. Surf. Sci.
  doi: 10.1016/j.apsusc.2006.03.002
– volume: 152
  start-page: C221
  year: 2005
  ident: 10.1016/j.mee.2012.12.004_b0115
  publication-title: J. Electrochem. Soc.
  doi: 10.1149/1.1867672
– volume: 82
  start-page: 4265
  year: 2003
  ident: 10.1016/j.mee.2012.12.004_b0055
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.1583866
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Snippet [Display omitted] ► The morphology of the electroplated Cu films is influenced by the Cu layers. ► The hardness of the electroplated Cu film is influenced by...
Cu films with different thicknesses were electroplated onto Cu seed layers. Cu seed layers with different thicknesses were sputtered on a Ta barrier layer; the...
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SubjectTerms ADHESION
Applied sciences
CHEMICAL PROPERTIES
Condensed matter: structure, mechanical and thermal properties
Copper
CORROSION
Cross-disciplinary physics: materials science; rheology
CRYSTAL ORIENTATION
Crystallography
Cu film
Deposition by sputtering
Electroplate
ELECTROPLATING
Exact sciences and technology
Grain size
GRAIN SIZE AND SHAPE
HARDNESS
Materials science
Mechanical and acoustical properties of condensed matter
Mechanical properties and methods of testing. Rheology. Fracture mechanics. Tribology
Mechanical properties of solids
Mechanical property
Metals. Metallurgy
Methods of deposition of films and coatings; film growth and epitaxy
Morphology
Orientation
Other heat and thermomechanical treatments
Physics
PROPERTIES
Seeds
Sputtering
Treatment of materials and its effects on microstructure and properties
Tribology and hardness
Title Effect of a Cu seed layer on electroplated Cu film
URI https://dx.doi.org/10.1016/j.mee.2012.12.004
https://www.proquest.com/docview/1365115432
Volume 105
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