Polarized Raman spectroscopy analysis of SiHX bonds in nanocrystalline silicon thin films

• Published in: Thin solid films Vol. 537; pp. 145 - 148
• Main Authors: Chaigneau, M., Johnson, E.V., Kroely, L., Roca i Cabarrocas, P., Ossikovski, R.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 30.06.2013; Elsevier
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Deposition; Energy; Exact sciences and technology; Ion and electron beam-assisted deposition; ion plating; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Nanocrystalline silicon; Nanocrystals; Nanoscale materials and structures: fabrication and characterization; Natural energy; Origins; Other topics in nanoscale materials and structures; Photovoltaic conversion; Physics; Physics of gases, plasmas and electric discharges; Physics of plasmas and electric discharges; Plasma applications; Plasma-based ion implantation and deposition; Polarized Raman spectroscopy; Raman scattering; Scattering; Solar cell; Solar cells; Solar cells. Photoelectrochemical cells; Solar energy; Stretching; Thin film; Thin films; Solar cell; Polarized Raman spectroscopy; Nanocrystalline silicon; Thin film; Raman spectra; Infrared spectroscopy; Fourier transform spectroscopy; XRD; Symmetry groups; Nanostructures; Photovoltaic cell; Thin films; Crystallites; Hydrogen bonds; Raman scattering; Chemical bonds; Silicon; Absorption spectra; Stretching; Nanocrystal; Solar cells; Symmetry property; Secondary ion mass spectrometry; Deposition rate; Raman spectroscopy; Interfaces; Vibrational modes; Plasma deposition

For nanocrystalline silicon films deposited at high rates, the presence of a silicon–hydrogen (SiH) bond stretching mode doublet in the high wavenumber region of the Raman spectrum can be used for optimizing the stabilized efficiency of solar cells based on this material. These peaks appear often fo...