Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C

• Published in: NPJ 2D materials and applications Vol. 3; no. 1
• Main Authors: Ansari, Lida, Monaghan, Scott, McEvoy, Niall, Coileáin, Cormac Ó, Cullen, Conor P., Lin, Jun, Siris, Rita, Stimpel-Lindner, Tanja, Burke, Kevin F., Mirabelli, Gioele, Duffy, Ray, Caruso, Enrico, Nagle, Roger E., Duesberg, Georg S., Hurley, Paul K., Gity, Farzan
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 03.09.2019; Nature Publishing Group
• Subjects: 639/301/1005/1007; 639/301/357/1018; 639/925/357/1018; 639/925/927/1007; Chemistry and Materials Science; Density functional theory; Electrical measurement; Energy gap; Evolution; Field effect transistors; Film thickness; Hole mobility; Low temperature; Materials Science; MOSFETs; Nanotechnology; P-type semiconductors; Platinum; Quantum confinement; Room temperature; Semiconductor devices; Silicon dioxide; Silicon substrates; Surfaces and Interfaces; Thick films; Thickness measurement; Thin Films

In this work, we present a comprehensive theoretical and experimental study of quantum confinement in layered platinum diselenide (PtSe 2 ) films as a function of film thickness. Our electrical measurements, in combination with density functional theory calculations, show distinct layer-dependent se...