Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C - Ansari, Lida; Monaghan, Scott; McEvoy, Niall; Coileáin, Cormac Ó; Cullen, Conor P.; Lin, Jun; Siris, Rita; Stimpel-Lindner, Tanja; Burke, Kevin F.; Mirabelli, Gioele; Duffy, Ray; Caruso, Enrico; et al. (NPJ 2D materials and applications, 2019)
Keywords: 639/301/1005/1007; 639/301/357/1018; 639/925/357/1018; 639/925/927/1007; Chemistry and Materials Science; Density functional theory; Electrical measurement; Energy gap; Evolution; Field effect transistors; Film thickness; Hole mobility; Low temperature; Materials Science; MOSFETs; Nanotechnology; P-type semiconductors; Platinum; Quantum confinement; Room temperature; Semiconductor devices; Silicon dioxide; Silicon substrates; Surfaces and Interfaces; Thick films; Thickness measurement; Thin Films