Active Gate Driver for Improving Current Sharing Performance of Paralleled High-Power SiC MOSFET Modules

• Published in: IEEE transactions on power electronics Vol. 36; no. 2; pp. 1491 - 1505
• Main Authors: Wen, Yang, Yang, Yuan, Gao, Yong
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.02.2021; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Active gate driver (AGD); Circuits; Current sharing; Gate drivers; Logic gates; Modules; MOSFET; MOSFETs; Parallel connected; parallel operation; Silicon carbide; silicon carbide (SiC) MOSFET; Switches; Switching; Systems design; Topology

Featuring higher switching speed and lower losses, the silicon carbide MOSFETs (SiC MOSFETs) are widely used in higher power density and higher efficiency power electronic applications as a new solution. Due to the limited current capability of a single module, more modules parallel-connected are ne...