Active Gate Driver for Improving Current Sharing Performance of Paralleled High-Power SiC MOSFET Modules

Featuring higher switching speed and lower losses, the silicon carbide MOSFETs (SiC MOSFETs) are widely used in higher power density and higher efficiency power electronic applications as a new solution. Due to the limited current capability of a single module, more modules parallel-connected are ne...

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Published inIEEE transactions on power electronics Vol. 36; no. 2; pp. 1491 - 1505
Main Authors Wen, Yang, Yang, Yuan, Gao, Yong
Format Journal Article
LanguageEnglish
Published New York IEEE 01.02.2021
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Active gate driver (AGD)
Circuits
Current sharing
Gate drivers
Logic gates
Modules
MOSFET
MOSFETs
Parallel connected
parallel operation
Silicon carbide
silicon carbide (SiC) MOSFET
Switches
Switching
Systems design
Topology
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Abstract Featuring higher switching speed and lower losses, the silicon carbide MOSFETs (SiC MOSFETs) are widely used in higher power density and higher efficiency power electronic applications as a new solution. Due to the limited current capability of a single module, more modules parallel-connected are necessary for higher power application. However, current sharing is the key obstacle. In this article, an active gate driver (AGD) for high-power SiC MOSFETs is presented to balance the currents of parallel-connected SiC MOSFET modules. The principle of the AGD is based on dynamic gate drive voltage adjustment to synchronize current edges and current slopes among parallel-connected SiC MOSFET modules automatically. Each AGD measures and controls the current of its SiC MOSFET module individually. No extra supervising control circuit is needed. In addition, the hardware and software configurations are independent of the system design and no restrictions on the number of SiC MOSFET modules connected in parallel exist. Finally, the switching performance of the AGD was experimentally verified on two parallel-connected SiC MOSFET modules in a multipulse test under constant and variable load currents. In addition, the effectiveness of AGD under different control topologies has been studied with simulation and verified using three parallel-connected SiC MOSFET modules.
AbstractList Featuring higher switching speed and lower losses, the silicon carbide MOSFETs (SiC MOSFETs) are widely used in higher power density and higher efficiency power electronic applications as a new solution. Due to the limited current capability of a single module, more modules parallel-connected are necessary for higher power application. However, current sharing is the key obstacle. In this article, an active gate driver (AGD) for high-power SiC MOSFETs is presented to balance the currents of parallel-connected SiC MOSFET modules. The principle of the AGD is based on dynamic gate drive voltage adjustment to synchronize current edges and current slopes among parallel-connected SiC MOSFET modules automatically. Each AGD measures and controls the current of its SiC MOSFET module individually. No extra supervising control circuit is needed. In addition, the hardware and software configurations are independent of the system design and no restrictions on the number of SiC MOSFET modules connected in parallel exist. Finally, the switching performance of the AGD was experimentally verified on two parallel-connected SiC MOSFET modules in a multipulse test under constant and variable load currents. In addition, the effectiveness of AGD under different control topologies has been studied with simulation and verified using three parallel-connected SiC MOSFET modules.
Author Yang, Yuan
Wen, Yang
Gao, Yong
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Cites_doi 10.1109/APEC.2014.6803501
10.1109/TIE.2019.2901655
10.1109/TPEL.2017.2655496
10.1109/TDMR.2019.2949449
10.1109/JESTPE.2018.2870248
10.1109/TPEL.2018.2827989
10.1109/PECI.2018.8334986
10.1109/APEC.2013.6520216
10.1109/TCPMT.2016.2637906
10.1109/TPEL.2018.2797326
10.1109/TIE.2017.2716868
10.1109/JESTPE.2017.2720731
10.1109/TPEL.2016.2562030
10.1109/TPEL.2018.2878779
10.1109/ITEC-AP.2018.8433284
10.1109/ISPSD.2013.6694398
10.1109/TPEL.2018.2834345
10.1109/TPEL.2016.2646323
10.1109/TPS.2008.2003971
10.1109/TPEL.2018.2809923
10.1049/iet-cds.2017.0255
10.1109/TPEL.2015.2408054
10.1109/JESTPE.2019.2939644
10.1109/TIE.2017.2719603
10.1109/JESTPE.2019.2924735
10.1109/TPEL.2019.2954716
10.1109/TPEL.2016.2553133
10.1109/TPEL.2017.2716370
10.1049/joe.2018.8103
10.1049/iet-pel.2018.5418
10.1109/TPEL.2019.2934739
10.1109/TPEL.2019.2952326
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References ref35
ref13
ref34
ref12
ref15
ref31
ref30
ref33
ref11
ref32
ref10
ref2
ref1
ref17
ref16
(ref14) 0
ref19
ref18
grider (ref22) 0
ref24
ref23
ref26
ref25
ref20
fabre (ref7) 2016; 52
ref21
ref28
ref27
ref29
ref8
ref9
ref4
ref3
ref6
ref5
lobsiger (ref36) 2011
References_xml – ident: ref31
  doi: 10.1109/APEC.2014.6803501
– ident: ref25
  doi: 10.1109/TIE.2019.2901655
– ident: ref28
  doi: 10.1109/TPEL.2017.2655496
– ident: ref15
  doi: 10.1109/TDMR.2019.2949449
– ident: ref21
  doi: 10.1109/JESTPE.2018.2870248
– ident: ref12
  doi: 10.1109/TPEL.2018.2827989
– ident: ref13
  doi: 10.1109/PECI.2018.8334986
– year: 0
  ident: ref14
  article-title: Design considerations for designing with cree sic modules part 1. Understanding the effects of parasitic inductance
– start-page: 1
  year: 2011
  ident: ref36
  article-title: Decentralized active gate control for current balancing of parallel connected IGBT modules
  publication-title: Proc Eur Conf Power Electron Appl
– year: 0
  ident: ref22
  article-title: Recent advances in 900 V to 10 kV SiC MOSFET technology
– ident: ref34
  doi: 10.1109/APEC.2013.6520216
– ident: ref8
  doi: 10.1109/TCPMT.2016.2637906
– ident: ref10
  doi: 10.1109/TPEL.2018.2797326
– ident: ref24
  doi: 10.1109/TIE.2017.2716868
– ident: ref18
  doi: 10.1109/JESTPE.2017.2720731
– ident: ref19
  doi: 10.1109/TPEL.2016.2562030
– ident: ref30
  doi: 10.1109/TPEL.2018.2878779
– ident: ref35
  doi: 10.1109/ITEC-AP.2018.8433284
– ident: ref33
  doi: 10.1109/ISPSD.2013.6694398
– ident: ref1
  doi: 10.1109/TPEL.2018.2834345
– ident: ref23
  doi: 10.1109/TPEL.2016.2646323
– ident: ref32
  doi: 10.1109/TPS.2008.2003971
– ident: ref2
  doi: 10.1109/TPEL.2018.2809923
– ident: ref5
  doi: 10.1049/iet-cds.2017.0255
– ident: ref9
  doi: 10.1109/TPEL.2015.2408054
– ident: ref11
  doi: 10.1109/JESTPE.2019.2939644
– volume: 52
  start-page: 1669
  year: 2016
  ident: ref7
  article-title: Parallel connection of 1200-V/100-A SiC-MOSFET half-bridge modules
  publication-title: IEEE Trans Ind Appl
– ident: ref29
  doi: 10.1109/TIE.2017.2719603
– ident: ref3
  doi: 10.1109/JESTPE.2019.2924735
– ident: ref6
  doi: 10.1109/TPEL.2019.2954716
– ident: ref26
  doi: 10.1109/TPEL.2016.2553133
– ident: ref27
  doi: 10.1109/TPEL.2017.2716370
– ident: ref20
  doi: 10.1049/joe.2018.8103
– ident: ref17
  doi: 10.1049/iet-pel.2018.5418
– ident: ref16
  doi: 10.1109/TPEL.2019.2934739
– ident: ref4
  doi: 10.1109/TPEL.2019.2952326
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Snippet Featuring higher switching speed and lower losses, the silicon carbide MOSFETs (SiC MOSFETs) are widely used in higher power density and higher efficiency...
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SubjectTerms Active gate driver (AGD)
Circuits
Current sharing
Gate drivers
Logic gates
Modules
MOSFET
MOSFETs
Parallel connected
parallel operation
Silicon carbide
silicon carbide (SiC) MOSFET
Switches
Switching
Systems design
Topology
Title Active Gate Driver for Improving Current Sharing Performance of Paralleled High-Power SiC MOSFET Modules
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Volume 36
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