APA (7th ed.) Citation

Wen, Y., Yang, Y., & Gao, Y. (2021). Active Gate Driver for Improving Current Sharing Performance of Paralleled High-Power SiC MOSFET Modules. IEEE transactions on power electronics, 36(2), 1491-1505. https://doi.org/10.1109/TPEL.2020.3006071

Chicago Style (17th ed.) Citation

Wen, Yang, Yuan Yang, and Yong Gao. "Active Gate Driver for Improving Current Sharing Performance of Paralleled High-Power SiC MOSFET Modules." IEEE Transactions on Power Electronics 36, no. 2 (2021): 1491-1505. https://doi.org/10.1109/TPEL.2020.3006071.

MLA (9th ed.) Citation

Wen, Yang, et al. "Active Gate Driver for Improving Current Sharing Performance of Paralleled High-Power SiC MOSFET Modules." IEEE Transactions on Power Electronics, vol. 36, no. 2, 2021, pp. 1491-1505, https://doi.org/10.1109/TPEL.2020.3006071.