A New Wideband, Low Insertion Loss, High Linearity SiGe RF Switch

• Published in: IEEE microwave and wireless components letters Vol. 30; no. 10; pp. 985 - 988
• Main Authors: Cheon, Clifford D., Cho, Moon-Kyu, Rao, Sunil G., Cardoso, Adilson S., Connor, Jeffrey D., Cressler, John D.
• Format: Journal Article
• Language: English
• Published: IEEE 01.10.2020
• Subjects: Antiparallel (AP); Bandwidth; bipolar complementary metal-oxide-semiconductor (BiCMOS); heterojunction bipolar transistor (HBT); Heterojunction bipolar transistors; Insertion loss; millimeter-wave; Radio frequency; SiGe HBT; Silicon germanium; single-pole double-throw (SPDT); switch; Switches; Switching circuits; wideband

This letter presents new wideband single-pole double-throw (SPDT) RF switches utilizing SiGe heterojunction bipolar transistors (HBTs) for both series and shunt switches. SiGe HBT, when used as a series switch, exhibits small parasitic components compared to bulk CMOS, which improves insertion loss...