Elastic recoil detection analysis of the concentration and thermal release of hydrogen in a-Si : H films by the ECR plasma CVD method

• Published in: Japanese Journal of Applied Physics Vol. 29; no. 9; pp. 1656 - 1657
• Main Authors: UMEZAWA, K, SHOJI, F, HANAWA, T, OURA, K
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01.09.1990
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of crystal growth; physics of crystal growth; Physics; Thickness; Heat treatment; Silicon; Experimental study; Chemical vapor deposition; Activation energy
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.29.1656

For the a-Si:H films prepared by ECR plasma CVD, the hydrogen content and its variation associated with heat treatment have been studied by means of 6.06 MeV- 19 F-ERDA. It was found that as the deposition temperature was elevated from room temperature(RT) to 573 K, the hydrogen content in the film abruptly decreased. The activation energy for detrapping was estimated to be 0.84±0.02 eV for the Si-H bonds of two films prepared at RT and at 573 K. For a film prepared on a 5-in.-diameter Si wafer at RT, the film thickness was uniform in the error range of ±3% within the distance from the center to the edge of the wafer, while the hydrogen content fluctuated over the range of 20% near the edge.