Overview of Real-Time Lifetime Prediction and Extension for SiC Power Converters

• Published in: IEEE transactions on power electronics Vol. 35; no. 8; pp. 7765 - 7794
• Main Authors: Ni, Ze, Lyu, Xiaofeng, Yadav, Om Prakash, Singh, Brij N., Zheng, Sheng, Cao, Dong
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.08.2020; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Accelerated lifetime test (ALT); Accelerated tests; active thermal control; ageing indicator; Analytical models; Commercialization; Condition monitoring; Electric vehicles; Electronic devices; Energy conversion efficiency; failure mode; Failure modes; lifetime control; lifetime modeling; Mechanical engineering; Monitoring; MOSFET; Power converters; Real time; Reliability; Reliability engineering; remaining useful lifetime (RUL); Service life assessment; Silicon carbide; silicon carbide (SiC) <sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">mosfet; Software; Software development tools; Statistical models; Temperature measurement; Temperature sensors; temperature-sensitive electrical parameter (TSEP)

Remaining useful lifetime prediction and extension of Si power devices have been studied extensively. Silicon carbide (SiC) power devices have been developed and commercialized. Specifically, SiC mosfet s have been utilized for the next generation high-voltage, high-power converters with smaller siz...