Etching of GaAs by atomic hydrogen generated by a tungsten filament
It was found that GaAs was etched effectively by atomic hydrogen generated by a tungsten (W) filament. The experiment was performed in a pure H 2 gas or H 2 and He gas mixture at atmospheric pressure. The W-filament was heated up to 2000°C. The GaAs was etched with a smooth surface in pure H 2 gas a...
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Published in | Japanese Journal of Applied Physics Vol. 30; no. 8B; pp. L1447 - S1449 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Tokyo
Japanese journal of applied physics
01.08.1991
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Subjects | |
Online Access | Get full text |
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Summary: | It was found that GaAs was etched effectively by atomic hydrogen generated by a tungsten (W) filament. The experiment was performed in a pure H
2
gas or H
2
and He gas mixture at atmospheric pressure. The W-filament was heated up to 2000°C. The GaAs was etched with a smooth surface in pure H
2
gas and the etching rate was as high as 15 µm/h at a substrate temperature of 850°C, though the etching rate was low and the surface was rough with Ga droplets in He gas. These results suggest that Ga is removed from the GaAs surface as a hydride such as GaH
3
. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/jjap.30.l1447 |