Etching of GaAs by atomic hydrogen generated by a tungsten filament

It was found that GaAs was etched effectively by atomic hydrogen generated by a tungsten (W) filament. The experiment was performed in a pure H 2 gas or H 2 and He gas mixture at atmospheric pressure. The W-filament was heated up to 2000°C. The GaAs was etched with a smooth surface in pure H 2 gas a...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 30; no. 8B; pp. L1447 - S1449
Main Authors KOBAYASHI, R, FUJII, K, HASEGAWA, F
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 01.08.1991
Subjects
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Mechanical and acoustical properties; adhesion
Physics
Solid surfaces and solid-solid interfaces
Solid-fluid interfaces
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Gallium Arsenides
Gallium Hydrides
Engraving
Experimental study
Smooth surface
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Summary:It was found that GaAs was etched effectively by atomic hydrogen generated by a tungsten (W) filament. The experiment was performed in a pure H 2 gas or H 2 and He gas mixture at atmospheric pressure. The W-filament was heated up to 2000°C. The GaAs was etched with a smooth surface in pure H 2 gas and the etching rate was as high as 15 µm/h at a substrate temperature of 850°C, though the etching rate was low and the surface was rough with Ga droplets in He gas. These results suggest that Ga is removed from the GaAs surface as a hydride such as GaH 3 .
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.30.l1447