Effect of low-energy proton irradiation on parameters of silicon structures with n-p junction
The dependences of the separation probability of the Frenkel pair on the temperature and the position of the Fermi level in the band gap cause the dependences of primary radiation defects concentration on the irradiation temperature and impurity concentration. This conclusion is confirmed by study r...
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| Published in | Journal of physics. Conference series Vol. 1015; no. 2; pp. 22006 - 22011 |
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| Main Authors | , , , , , , |
| Format | Journal Article |
| Language | English |
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Bristol
IOP Publishing
01.05.2018
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| Abstract | The dependences of the separation probability of the Frenkel pair on the temperature and the position of the Fermi level in the band gap cause the dependences of primary radiation defects concentration on the irradiation temperature and impurity concentration. This conclusion is confirmed by study results of electrophysical and optical properties of silicon n+-p-p+ structures, irradiated by the proton flux with the energy of 40 keV and the fluence of 1015 cm−2. |
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| AbstractList | The dependences of the separation probability of the Frenkel pair on the temperature and the position of the Fermi level in the band gap cause the dependences of primary radiation defects concentration on the irradiation temperature and impurity concentration. This conclusion is confirmed by study results of electrophysical and optical properties of silicon n+-p-p+ structures, irradiated by the proton flux with the energy of 40 keV and the fluence of 1015 cm−2. |
| Author | Kovalenko, M S Agafonov, Y A Grigorian, L R Kolokolov, F A Bogatov, N M Kovalenko, A I Zinenko, V I |
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| Cites_doi | 10.1016/j.radphyschem.2017.05.017 10.1016/j.nimb.2015.08.088 10.1016/j.nimb.2016.08.003 10.1016/S0927-0248(00)00341-X 10.1016/j.nimb.2015.08.025 10.1002/pssa.201600447 10.1134/S1027451016020294 |
| ContentType | Journal Article |
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| DOI | 10.1088/1742-6596/1015/2/022006 |
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| References | Bogatov N M (8) 1999; 3 Emtsev V V (12) 1981 1 2 3 4 5 6 7 Vavilov V S (10) 1990 Kuznetsov N V (11) 1989 Bourgoin J (13) 1985 Bogatov N M (9) 2017; 3 |
| References_xml | – ident: 4 doi: 10.1016/j.radphyschem.2017.05.017 – ident: 3 doi: 10.1016/j.nimb.2015.08.088 – year: 1985 ident: 13 publication-title: Point defects in semiconductors. Experimental aspects contributor: fullname: Bourgoin J – year: 1989 ident: 11 publication-title: Radiation resistance of silicon contributor: fullname: Kuznetsov N V – year: 1990 ident: 10 publication-title: Defects in silicon and on its surface contributor: fullname: Vavilov V S – ident: 6 doi: 10.1016/j.nimb.2016.08.003 – year: 1981 ident: 12 publication-title: Impurities and point defects in semiconductors contributor: fullname: Emtsev V V – ident: 1 doi: 10.1016/S0927-0248(00)00341-X – ident: 2 doi: 10.1016/j.nimb.2015.08.025 – ident: 5 doi: 10.1002/pssa.201600447 – volume: 3 start-page: 13 year: 2017 ident: 9 publication-title: AASCIT Journal of Physics contributor: fullname: Bogatov N M – volume: 3 start-page: 72 year: 1999 ident: 8 publication-title: J. Surf. Invest.: X-Ray, Synchrotron Neutron Tech. contributor: fullname: Bogatov N M – ident: 7 doi: 10.1134/S1027451016020294 |
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| SubjectTerms | Fluence Optical properties Physics Proton irradiation Radiation damage Silicon |
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| Title | Effect of low-energy proton irradiation on parameters of silicon structures with n-p junction |
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