Grown-in defects limiting the bulk lifetime of p -type float-zone silicon wafers - Grant, N. E.; Rougieux, F. E.; Macdonald, D.; Bullock, J.; Wan, Y. (Journal of applied physics, 2015)
Keywords: Annealing; Applied physics; Constraining; Defects; Diffusion rate; Gettering; Impurities; Silicon; Silicon wafers; Wafers