Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film

• Published in: Journal of semiconductors Vol. 30; no. 9; pp. 151 - 154
• Main Author: 唐龙娟 朱银芳 杨晋玲 李艳 周威 解婧 刘云飞 杨富华
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.09.2009
• Subjects: PECVD法; 刻蚀速率; 化学气相沉积; 气体流量; 氮化硅薄膜; 蚀刻率; 退火条件; 退火温度

The influence of deposition, annealing conditions, and etchants on the wet etch rate of plasma enhanced chemical vapor deposition （PECVD） silicon nitride thin film is studied. The deposition source gas flow rate and annealing temperature were varied to decrease the etch rate of SiNx：H by HF solution...