杨富华, 唐. 朱. 杨. 李. 周. 解. 刘. (2009). Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film. Journal of semiconductors, 30(9), 151-154. https://doi.org/10.1088/1674-4926/30/9/096005
Chicago Style (17th ed.) Citation杨富华, 唐龙娟 朱银芳 杨晋玲 李艳 周威 解婧 刘云飞. "Dependence of Wet Etch Rate on Deposition, Annealing Conditions and Etchants for PECVD Silicon Nitride Film." Journal of Semiconductors 30, no. 9 (2009): 151-154. https://doi.org/10.1088/1674-4926/30/9/096005.
MLA (9th ed.) Citation杨富华, 唐龙娟 朱银芳 杨晋玲 李艳 周威 解婧 刘云飞. "Dependence of Wet Etch Rate on Deposition, Annealing Conditions and Etchants for PECVD Silicon Nitride Film." Journal of Semiconductors, vol. 30, no. 9, 2009, pp. 151-154, https://doi.org/10.1088/1674-4926/30/9/096005.