AlGaN/GaN dual-gate high electron mobility transistors on SiC substrates for high-power mixers

• Published in: Physica status solidi. C Vol. 2; no. 7; pp. 2623 - 2626
• Main Authors: Shiojima, K., Makimura, T., Kosugi, T., Sugitani, S., Shigekawa, N., Ishikawa, H., Egawa, T.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.05.2005; WILEY‐VCH Verlag
• Subjects: 84.30.Qi; 85.30.Tv

We have demonstrated dual‐gate AlGaN/GaN high‐electron‐mobility transistors on SiC substrates for high‐power mixers and examined DC and up‐conversion RF measurements with drain‐source bias voltages (VDS) to analyze the possible output level. The 0.7 × 300 µm‐gate device exhibited the maximum transco...