M -plane InGaN/GaN light emitting diodes fabricated by MOCVD regrowth on c -plane patterned templates

• Published in: Physica status solidi. C Vol. 5; no. 9; pp. 2963 - 2965
• Main Authors: Schaake, Christopher A., Fichtenbaum, Nicholas A., Neufeld, Carl J., Keller, Stacia, DenBaars, Steven P., Speck, James S., Mishra, Umesh K.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.07.2008; WILEY‐VCH Verlag
• Subjects: 78.55.Cr; 78.60.Fi; 81.15.Gh; 85.60.Jb
• ISSN: 1862-6351; 1610-1634; 1610-1642
• DOI: 10.1002/pssc.200779284

In this work we demonstrate a light emitting diode (LED) with m ‐plane quantum wells fabricated on a (000$ \bar 1 $) template. N‐polar, n‐type GaN was grown by MOCVD on vicinal sapphire substrates. Stripes, measuring 500 nm wide, 500 nm tall and spaced 2 μm apart, were etched parallel to the 〈11$ \bar 2 $0〉 direction leading to sidewalls that are approximately {10$ \bar 1 $0}. Sputtered AlN was used as a regrowth mask on the c ‐plane surfaces. An active region consisting of 5 InGaN quantum wells and GaN barriers followed by p‐type was grown. The regrowth occurred mostly on the exposed m ‐plane sidewalls, leading to lateral growth in the 〈10$ \bar 1 $0〉 direction. The LED was processed using conventional methods. A thick metal contact was used to connect the p‐regions together. Current vs. voltage measurements showed good rectifying behavior with a turn on of about 6 volts. On‐wafer electroluminescence measurements revealed a peak wavelength of 422 nm. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)