Theory of spin-dependent tunneling and resonant tunneling in layered structures based on (Ga,Mn)As

We present theory of coherent tunneling in all‐semiconductor heterostructures containing (Ga,Mn)As ferromagnetic layers. The model combines multi‐orbital tight‐binding approach with Landauer‐Büttiker formalism. Prompted by experimental results on resonant tunneling (RTD), tunneling magnetoresistance...

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Published inPhysica status solidi. C Vol. 3; no. 12; pp. 4188 - 4191
Main Authors Sankowski, P., Kacman, P., Majewski, J. A., Dietl, T.
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.01.2007
WILEY‐VCH Verlag
Subjects
72.25.Hg
73.40.Gk
75.47.Pq
75.50.Pq
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Summary:We present theory of coherent tunneling in all‐semiconductor heterostructures containing (Ga,Mn)As ferromagnetic layers. The model combines multi‐orbital tight‐binding approach with Landauer‐Büttiker formalism. Prompted by experimental results on resonant tunneling (RTD), tunneling magnetoresistance (TMR), and anisotropic magnetoresistance (TAMR), we describe the applicability of our theory to asses the magnitude as well as the angular and bias dependencies of the spin current in these devices. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Bibliography:EC project NANOSPIN - No. FP6-2002-IST-015728
ArticleID:PSSC200672812
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ISSN:1862-6351
1610-1634
1610-1642
DOI:10.1002/pssc.200672812