Computer-assisted analysis of TEM diffraction contrast images of (In,Ga)N/GaN nanostructures

III‐nitride semiconductor nanostructures are subject of intense studies with respect to their optoelectronic, structural and chemical properties. Important parameters for the wavelength of the emitted light are the chemical composition and the dimensionality of the nanostructures. Transmission elect...

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Bibliographic Details
Published inPhysica status solidi. C Vol. 5; no. 12; pp. 3732 - 3735
Main Authors Manolaki, P., Häusler, I., Kirmse, H., Mogilatenko, A., Neumann, W., Smałc-Koziorowska, J., Skierbiszewski, C.
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.12.2008
WILEY‐VCH Verlag
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