APA (7th ed.) Citation

Zhang, M., Wu, F., Yu, Q., Liu, W., Wang, Y., & Xie, C. (2020). Exploiting Error Characteristic to Optimize Read Voltage for 3-D NAND Flash Memory. IEEE transactions on electron devices, 67(12), 5490-5496. https://doi.org/10.1109/TED.2020.3030867

Chicago Style (17th ed.) Citation

Zhang, Meng, Fei Wu, Qin Yu, Weihua Liu, Yifan Wang, and Changsheng Xie. "Exploiting Error Characteristic to Optimize Read Voltage for 3-D NAND Flash Memory." IEEE Transactions on Electron Devices 67, no. 12 (2020): 5490-5496. https://doi.org/10.1109/TED.2020.3030867.

MLA (9th ed.) Citation

Zhang, Meng, et al. "Exploiting Error Characteristic to Optimize Read Voltage for 3-D NAND Flash Memory." IEEE Transactions on Electron Devices, vol. 67, no. 12, 2020, pp. 5490-5496, https://doi.org/10.1109/TED.2020.3030867.