Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films

• Published in: IEEE electron device letters Vol. 41; no. 12; pp. 1774 - 1777
• Main Authors: Wang, Dixiong, Zheng, Jeffrey, Musavigharavi, Pariasadat, Zhu, Wanlin, Foucher, Alexandre C., Trolier-McKinstry, Susan E., Stach, Eric A., Olsson, Roy H.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.12.2020; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Aluminum; Aluminum alloys; Aluminum scandium nitride; Coercivity; Electrical properties; Ferroelectric films; Ferroelectric materials; ferroelectric memory; ferroelectric thin film; Ferroelectricity; Nonvolatile memory; Piezoelectricity; Room temperature; Scandium; Silicon wafers; Switching; Thin films; Waveforms

Ferroelectric switching was studied in 20 nm thick Al 0.68 Sc 0.32 N and Al 0.64 Sc 0.36 N films (with ~4 nm surface oxides) on platinized silicon wafers by multiple electrical characterization methods. Positive up negative down (PUND) measurements were conducted using 100 μs monopolar triangular wa...