Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films - Wang, Dixiong; Zheng, Jeffrey; Musavigharavi, Pariasadat; Zhu, Wanlin; Foucher, Alexandre C.; Trolier-McKinstry, Susan E.; Stach, Eric A.; Olsson, Roy H. (IEEE electron device letters, 2020)
Keywords: Aluminum; Aluminum alloys; Aluminum scandium nitride; Coercivity; Electrical properties; Ferroelectric films; Ferroelectric materials; ferroelectric memory; ferroelectric thin film; Ferroelectricity; Nonvolatile memory; Piezoelectricity; Room temperature; Scandium; Silicon wafers; Switching; Thin films; Waveforms