Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films
Ferroelectric switching was studied in 20 nm thick Al 0.68 Sc 0.32 N and Al 0.64 Sc 0.36 N films (with ~4 nm surface oxides) on platinized silicon wafers by multiple electrical characterization methods. Positive up negative down (PUND) measurements were conducted using 100 μs monopolar triangular wa...
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| Published in | IEEE electron device letters Vol. 41; no. 12; pp. 1774 - 1777 |
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| Main Authors | , , , , , , , |
| Format | Journal Article |
| Language | English |
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New York
IEEE
01.12.2020
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
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| Abstract | Ferroelectric switching was studied in 20 nm thick Al 0.68 Sc 0.32 N and Al 0.64 Sc 0.36 N films (with ~4 nm surface oxides) on platinized silicon wafers by multiple electrical characterization methods. Positive up negative down (PUND) measurements were conducted using 100 μs monopolar triangular waveform excitation. At room temperature, Al 0.68 Sc 0.32 N exhibited an apparent remanent polarization, P r = 140 μC/cm 2 and a coercive field, E c = 6.5 MV/cm, while film leakage prevented quantitative measurement of the Al 0.64 Sc 0.36 N ferroelectric properties. Remanent polarizations of 75 μC/cm 2 for Al 0.68 Sc 0.32 N and 25μC/cm 2 for Al 0.64 Sc 0.36 N were measured at 120 K. Partial ferroelectric switching was confirmed at room temperature for both materials via the measured transverse piezoelectric coefficients (e 31, f ) of -1.3 C/m 2 (down-switching) and -0.3 C/m 2 (up-switching) for Al 0.68 Sc 0.32 N, and -0.9 C/m 2 (down-switching) and -0.7 C/m 2 (up-switching) for Al 0.64 Sc 0.36 N. |
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| AbstractList | Ferroelectric switching was studied in 20 nm thick Al 0.68 Sc 0.32 N and Al 0.64 Sc 0.36 N films (with ~4 nm surface oxides) on platinized silicon wafers by multiple electrical characterization methods. Positive up negative down (PUND) measurements were conducted using 100 μs monopolar triangular waveform excitation. At room temperature, Al 0.68 Sc 0.32 N exhibited an apparent remanent polarization, P r = 140 μC/cm 2 and a coercive field, E c = 6.5 MV/cm, while film leakage prevented quantitative measurement of the Al 0.64 Sc 0.36 N ferroelectric properties. Remanent polarizations of 75 μC/cm 2 for Al 0.68 Sc 0.32 N and 25μC/cm 2 for Al 0.64 Sc 0.36 N were measured at 120 K. Partial ferroelectric switching was confirmed at room temperature for both materials via the measured transverse piezoelectric coefficients (e 31, f ) of -1.3 C/m 2 (down-switching) and -0.3 C/m 2 (up-switching) for Al 0.68 Sc 0.32 N, and -0.9 C/m 2 (down-switching) and -0.7 C/m 2 (up-switching) for Al 0.64 Sc 0.36 N. Ferroelectric switching was studied in 20 nm thick Al0.68Sc0.32N and Al0.64Sc0.36N films (with ~4 nm surface oxides) on platinized silicon wafers by multiple electrical characterization methods. Positive up negative down (PUND) measurements were conducted using 100 [Formula Omitted] monopolar triangular waveform excitation. At room temperature, Al0.68Sc0.32N exhibited an apparent remanent polarization, [Formula Omitted]/cm2 and a coercive field, [Formula Omitted] MV/cm, while film leakage prevented quantitative measurement of the Al0.64Sc0.36N ferroelectric properties. Remanent polarizations of [Formula Omitted]/cm2 for Al0.68Sc0.32N and [Formula Omitted]/cm2for Al0.64Sc0.36N were measured at 120 K. Partial ferroelectric switching was confirmed at room temperature for both materials via the measured transverse piezoelectric coefficients (e31, f) of −1.3 C/m2 (down-switching) and −0.3 C/m2 (up-switching) for Al0.68Sc0.32N, and −0.9 C/m2 (down-switching) and −0.7 C/m2 (up-switching) for Al0.64Sc0.36N. |
| Author | Zheng, Jeffrey Musavigharavi, Pariasadat Zhu, Wanlin Olsson, Roy H. Foucher, Alexandre C. Wang, Dixiong Trolier-McKinstry, Susan E. Stach, Eric A. |
| Author_xml | – sequence: 1 givenname: Dixiong orcidid: 0000-0002-2067-3646 surname: Wang fullname: Wang, Dixiong email: dixiongw@seas.upenn.edu organization: Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA – sequence: 2 givenname: Jeffrey surname: Zheng fullname: Zheng, Jeffrey organization: Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA – sequence: 3 givenname: Pariasadat surname: Musavigharavi fullname: Musavigharavi, Pariasadat organization: Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA – sequence: 4 givenname: Wanlin surname: Zhu fullname: Zhu, Wanlin organization: Materials Research Institute, Pennsylvania State University, University Park, PA, USA – sequence: 5 givenname: Alexandre C. orcidid: 0000-0001-5042-4002 surname: Foucher fullname: Foucher, Alexandre C. organization: Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA – sequence: 6 givenname: Susan E. orcidid: 0000-0002-7267-9281 surname: Trolier-McKinstry fullname: Trolier-McKinstry, Susan E. organization: Materials Research Institute, Pennsylvania State University, University Park, PA, USA – sequence: 7 givenname: Eric A. surname: Stach fullname: Stach, Eric A. organization: Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA – sequence: 8 givenname: Roy H. surname: Olsson fullname: Olsson, Roy H. organization: Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA |
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| Snippet | Ferroelectric switching was studied in 20 nm thick Al 0.68 Sc 0.32 N and Al 0.64 Sc 0.36 N films (with ~4 nm surface oxides) on platinized silicon wafers by... Ferroelectric switching was studied in 20 nm thick Al0.68Sc0.32N and Al0.64Sc0.36N films (with ~4 nm surface oxides) on platinized silicon wafers by multiple... |
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| SubjectTerms | Aluminum Aluminum alloys Aluminum scandium nitride Coercivity Electrical properties Ferroelectric films Ferroelectric materials ferroelectric memory ferroelectric thin film Ferroelectricity Nonvolatile memory Piezoelectricity Room temperature Scandium Silicon wafers Switching Thin films Waveforms |
| Title | Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films |
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