APA (7th ed.) Citation

Wang, D., Zheng, J., Musavigharavi, P., Zhu, W., Foucher, A. C., Trolier-McKinstry, S. E., . . . Olsson, R. H. (2020). Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films. IEEE electron device letters, 41(12), 1774-1777. https://doi.org/10.1109/LED.2020.3034576

Chicago Style (17th ed.) Citation

Wang, Dixiong, Jeffrey Zheng, Pariasadat Musavigharavi, Wanlin Zhu, Alexandre C. Foucher, Susan E. Trolier-McKinstry, Eric A. Stach, and Roy H. Olsson. "Ferroelectric Switching in Sub-20 Nm Aluminum Scandium Nitride Thin Films." IEEE Electron Device Letters 41, no. 12 (2020): 1774-1777. https://doi.org/10.1109/LED.2020.3034576.

MLA (9th ed.) Citation

Wang, Dixiong, et al. "Ferroelectric Switching in Sub-20 Nm Aluminum Scandium Nitride Thin Films." IEEE Electron Device Letters, vol. 41, no. 12, 2020, pp. 1774-1777, https://doi.org/10.1109/LED.2020.3034576.