Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy

• Published in: IEEE electron device letters Vol. 41; no. 5; pp. 685 - 688
• Main Authors: Yang, Song, Huang, Sen, Wei, Jin, Zheng, Zheyang, Wang, Yuru, He, Jiabei, Chen, Kevin J.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.05.2020; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">p -GaN/AlGaN/GaN heterojunction; Activation energy; Aluminum gallium nitrides; Capacitance; Capacitance deep-level transient spectroscopy (C-DLTS); Capacitors; Deep level transient spectroscopy; Electron traps; Energy levels; Gallium nitrides; HEMTs; Heterojunctions; High electron mobility transistors; hole insufficiency; Hole traps; Junctions; Logic gates; Semiconductor devices; Spectrum analysis; Threshold voltage; Transient analysis; trap states

In this work, the deep-level transient spectroscopy (DLTS) is conducted to investigate the gate stack of the <inline-formula> <tex-math notation="LaTeX">{p} </tex-math></inline-formula>-GaN gate HEMT with Schottky gate contact. A metal/<inline-formula> <tex...