Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy - Yang, Song; Huang, Sen; Wei, Jin; Zheng, Zheyang; Wang, Yuru; He, Jiabei; Chen, Kevin J. (IEEE electron device letters, 2020)
Keywords: p -GaN/AlGaN/GaN heterojunction; Activation energy; Aluminum gallium nitrides; Capacitance; Capacitance deep-level transient spectroscopy (C-DLTS); Capacitors; Deep level transient spectroscopy; Electron traps; Energy levels; Gallium nitrides; HEMTs; Heterojunctions; High electron mobility transistors; hole insufficiency; Hole traps; Junctions; Logic gates; Semiconductor devices; Spectrum analysis; Threshold voltage; Transient analysis; trap states