APA (7th ed.) Citation

Yang, S., Huang, S., Wei, J., Zheng, Z., Wang, Y., He, J., & Chen, K. J. (2020). Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy. IEEE electron device letters, 41(5), 685-688. https://doi.org/10.1109/LED.2020.2980150

Chicago Style (17th ed.) Citation

Yang, Song, Sen Huang, Jin Wei, Zheyang Zheng, Yuru Wang, Jiabei He, and Kevin J. Chen. "Identification of Trap States in P-GaN Layer of a P-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy." IEEE Electron Device Letters 41, no. 5 (2020): 685-688. https://doi.org/10.1109/LED.2020.2980150.

MLA (9th ed.) Citation

Yang, Song, et al. "Identification of Trap States in P-GaN Layer of a P-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy." IEEE Electron Device Letters, vol. 41, no. 5, 2020, pp. 685-688, https://doi.org/10.1109/LED.2020.2980150.